©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
5
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Electrical Specifications
The DC and RF specifications for the power amplifier are specified below. Refer to Table 3 for the DC voltage
and current specifications. Refer to Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rat-
ing conditions may affect device reliability.)
Input power to pin 3 (P
IN
)..................................................... +5dBm
Average output power from Pin 6 (P
OUT
)
1
......................................+25.5 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 1 and 2 (V
CC
)
2
......................................-0.3V to +6.0V
2. V
CC
maximum rating of 6.0V for RF output power levels up to 10 dBm.
Reference voltage to pin 4 (V
REF
).........................................-0.3V to +3.3V
DC supply current (I
CC
)
3
..................................................... 300mA
3. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Temperature (T
A
)............................................. -40ºC to +85ºC
Storage Temperature (T
STG
) ........................................... -40ºC to +120ºC
Maximum Junction Temperature (T
J
)............................................ +150ºC
Surface Mount Solder Reflow Temperature ............................ 260°C for 10 seconds
ESD Level for Human Body Model, HBM ......................................... 1250V
Table 2: Operating Range
Range Ambient Temp V
CC
Industrial -40°C to +85°C 3.0V to 4.6V
T2.1 75004
Table 3: DC Electrical Characteristics at 25°C
Symbol Parameter Min. Typ Max. Unit
V
CC
Supply Voltage at pins 1 and 2 3.0 3.3 4.6 V
I
CQ
Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM
54 Mbps signal
60 mA
V
REG
Reference Voltage for pin 4 2.9 V
I
CC
Current consumption to meet 802.11g OFDM 54 Mbps spectrum mask
@ 21.5 dBm
138 mA
Current consumption to meet 802.11b DSSS 54 Mbps spectrum mask
@ 22 dBm
155 mA
Current consumption to meet EVM ~3% @ 18 dBm Output Power with
802.11g OFDM 54 Mbps signal
105 mA
T3.1 75004
