OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HMC788ACPSZ-EP-R7

P1-P3P4-P6P7-P8
0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT
RF Gain Block
Enhanced Product
HMC788A-EP
Rev. 0 Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Gain: 14 dB typical
Operational frequency range: 0.01 GHz to 10 GHz
Input/output internally matched to 50 Ω
High input linearity
1 dB compression (P1dB): 20 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
Supply voltage: 5 V typical
2 mm × 2 mm, 6-lead lead frame chip scale package
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
(AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Cellular, 3G, LT E, WiMAX, and 4G
LO driver applications
Microwave radio
Test and measurement equipment
Ultra wideband (UWB) communications
FUNCTIONAL BLOCK DIAGRAM
2
1
3
6
5
4
GND
RF
IN
NIC
NIC
RF
OUT
PACKAGE
BASE
HMC788A-EP
NIC
16213-001
Figure 1.
GENERAL DESCRIPTION
The HMC788A-EP is a 0.01 GHz to 10 GHz, gain block,
monolithic microwave integrated circuit (MMIC) amplifier
using gallium arsenide (GaAs) and pseudomorphic high
electron mobility transistor (pHEMT) technology.
This 2 mm × 2 mm LFCSP amplifier can be used as either a
cascadable 50 Ω gain stage, or to drive the local oscillator (LO)
port of many of the single and double balanced mixers from
Analog Devices, Inc. with up to 20 dBm output power.
The HMC788A-EP offers 14 dB of gain and an OIP3 of 33 dBm
while requiring only 76 mA from a 5 V supply.
The Darlington feedback pair exhibits reduced sensitivity to
normal process variations and yields excellent gain stability over
temperature while requiring a minimal number of external bias
components.
Additional application and technical information can be found
in the HMC788A data sheet.
HMC788A-EP Enhanced Product
Rev. 0 | Page 2 of 8
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance .......................................................................4
Power Derating Curves.................................................................4
ESD Caution...................................................................................4
Pin Configuration and Function Descriptions ..............................5
Interface Schematics .....................................................................5
Typical Performance Characteristics ..............................................6
Outline Dimensions ..........................................................................8
Ordering Guide ..................................................................................8
REVISION HISTORY
10/2017—Revision 0: Initial Version
Enhanced Product HMC788A-EP
Rev. 0 | Page 3 of 8
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
Collector bias voltage (V
CC
) = 5 V, case temperature (T
CASE
) = 25°C, 6.35 µH external inductor between V
CC
and radio frequency output
(RF
OUT
), 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
OVERALL FUNCTION
Frequency Range
10
GHz
Gain 12 14 dB 0.01 GHz to 6.0 GHz
9 12 dB 6.0 GHz to 10.0 GHz
Gain Variation Over Temperature 0.004 dB/°C 0.01 GHz to 6.0 GHz
0.007 dB/°C 6.0 GHz to 10.0 GHz
Reverse Isolation 23 dB 0.01 GHz to 6.0 GHz
20 dB 6.0 GHz to 10 GHz
RADIO FREQUENCY (RF) INPUT INTERFACE
Input Return Loss 16 dB 0.01 GHz to 6.0 GHz
9 dB 6.0 GHz to 10.0 GHz
RF OUTPUT INTERFACE
Output Power for 1 dB Compression
P1dB
20
dBm
0.01 GHz to 6.0 GHz
15 18 dBm 6.0 GHz to 10.0 GHz
Output Return Loss 9 dB 0.01 GHz to 6.0 GHz
12 dB 6.0 GHz to 10.0 GHz
DISTORTION AND NOISE
Output Third-Order Intercept OIP3 33 dBm 0.01 GHz to 6.0 GHz
30 dBm 6.0 GHz to 10.0 GHz
Noise Figure NF 6 dB 0.01 GHz to 6.0 GHz
7 dB 6.0 GHz to 10.0 GHz
POWER INTERFACE
Supply Voltage 4.5 5 5.5 V
Supply Current I
CC
60 65 mA V
CC
= 4.5 V
76 mA V
CC
= 5 V
87 90 mA V
CC
= 5.5 V
P1-P3P4-P6P7-P8

HMC788ACPSZ-EP-R7

Mfr. #:
Buy HMC788ACPSZ-EP-R7
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier 10 GHz gain block LinrDrive/GainBlock
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet