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DMN3190LDW-13

P1-P3P4-P5
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
NEW PRODUCT
ADVANCE INFORMATION
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
(MAX)
Package
I
D
(MAX)
T
A
= +25°C
30V
190m @ V
GS
= 10V
SOT363
1A
335m @ V
GS
= 4.5V
0.75A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN3190LDW-7 SOT363 3000K/Tape & Reel
DMN3190LDW-13 SOT363 10000K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
ESD PROTECTED
Top View
S
2
D
2
D
1
S
1
G
2
G
1
Q
1
Q
2
Top View
Internal Schematic
e3
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
NEW PRODUCT
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1000
900
mA
T < 5s
T
A
= +25°C
T
A
= +70°C
I
D
1300
1000
mA
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle=1%)
I
DM
2.0 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.32
W
T
A
= +70°C
0.19
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
395
°C/W
T < 5s 320
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.4
W
T
A
= +70°C
0.25
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
320
°C/W
T < 5s 250
Thermal Resistance, Junction to Case
R
JC
143
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 1 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 A
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
1.5 — 2.8 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
— 122 190
m
V
GS
= 10V, I
D
= 1.3A
— 181 335
V
GS
= 4.5V, I
D
= 290mA
Forward Transfer Admittance
|Y
fs
|
— 0.7 — mS
V
DS
= 10V, I
D
= 250mA
Diode Forward Voltage
V
SD
— — 1.2 V
V
GS
= 0V, I
S
= 250mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 87 — pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 17 — pF
Reverse Transfer Capacitance
C
rss
— 12 — pF
Gate Resistance
R
g
— 69.8 —
f = 1MHz , V
GS
= 0V, V
DS
= 0V
Total Gate Charge (V
GS
= 4.5V) Q
g
— 0.9 — nC
V
DS
= 10V, I
D
= 250mA
Total Gate Charge (V
GS
= 10V) Q
g
— 2.0 — nC
Gate-Source Charge
Q
g
s
— 0.3 — nC
Gate-Drain Charge
Q
g
d
— 0.3 — nC
Turn-On Delay Time
t
D
(
on
)
— 4.5 — ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 10, I
D
= 100mA
Turn-On Rise Time
t
r
— 8.9 — ns
Turn-Off Delay Time
t
D
(
off
)
— 30.3 — ns
Turn-Off Fall Time
t
f
— 15.6 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
3 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
NEW PRODUCT
ADVANCE INFORMATION
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
AIN
EN
(A)
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
012345
V= 2.5V
GS
V= 3.0V
GS
V= 3.5V
GS
V= 4.5V
GS
V = 10V
GS
V= 4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
AIN
ENT (A)
D
0
0.4
0.8
1.2
1.6
2
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-S
URCE
N-RESISTANCE ( )
DS(ON)
0
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0.275
0.3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V = 4.5V
GS
V = 10V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1
1.5
2
2.5
V = 4.5V
I = 250mA
GS
D
V=V
I= 0.5A
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.1
0.2
0.3
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
P1-P3P4-P5

DMN3190LDW-13

Mfr. #:
Buy DMN3190LDW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
Lifecycle:
New from this manufacturer.
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