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USBULC6-3F3K

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
March 2014 DocID023694 Rev 1 1/10
USBULC6-3F3K
3-line low capacitance protection for high speed USB
Datasheet
-
production data
Figure 1. Pin configuration (bump side)
Features
• Ultra low capacitance 0.85 pF
• Unidirectional device
• Low clamping factor V
CL
/V
BR
• Fast response time
• Very thin package: 0.605 mm max
• Low leakage current
Benefits
• High ESD and EOS protection level
• High integration
• Suitable for high density boards
Complies with the following standards:
• IEC 61000-4-2 level 4
• MIL STD 883G - Method 3015.7: class 3B
Application
High speed USB port in wireless handsets (up to
480 Mb/s according to USB 2.0 high speed
specification)
Description
The USBULC6-3F3K is a monolithic, application
specific discrete device dedicated to ESD
protection of high speed interfaces.
Its ultralow line capacitance secures a high level
of signal integrity without compromising the
protection of downstream sensitive chips against
the most stringently characterized ESD strikes.
Flip Chip
(4 bumps)
1
2
AB
Data Data
GND ID
Data DataDataData DataData
GND IDGNDGND IDID
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Characteristics USBULC6-3F3K
2/10 DocID023694 Rev 1
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
ESD discharge IEC 61000-4-2, level 4 contact discharge 8 kV
P
PP
Peak pulse power dissipation (8/20 µs) T
j
initial = T
amb
50 W
I
PP
Peak pulse current (8/20 µs) 2.5 A
T
j
Maximum junction temperature 125 °C
T
op
Operating temperature range -30 to + 85 °C
T
stg
Storage temperature range -55 to +150 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 6 - - V
I
RM
V
RM
= 3 V - - 100 nA
C
I/O to GND
Data (A1 and B1 bumps): V
R
= 0 V DC,
F=1 MHz, V
OSC
= 30 mV
- 0.85 1.2
pF
ID (B2 bump): V
R
= 0 V DC, F = 1 MHz,
V
OSC
= 30 mV
RMS
--3
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
C=
BR
RM RM
RM
I/O to GND
I/O to GND capacitance
I
V
I
F
I
RM
I
PP
V
RM
V
F
V
BR
Slope = 1/Rd
V
CL
Obsolete Product(s) - Obsolete Product(s)
DocID023694 Rev 1 3/10
USBULC6-3F3K Characteristics
10
Figure 3. Relative variation of peak pulse power
versus initial junction temperature (typical
value)
Figure 4. Peak pulse power versus exponential
pulse duration (typical)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
P (W)
PP
T (°C)
j
1
10
100
1000
10 100 1000
P (W)
PP
T (µs)
P
Figure 5. Clamping voltage versus peak pulse
current (typical values, exponential waveform)
Figure 6. Forward voltage drop versus peak
forward current (typical values)
0.1
1.0
10.0
0102030
T initial = 25 °C
8/20 µs
j
I (A)
PP
V (V)
CL
0.10
1.00
10.00
0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 2.8 3.0 3.3 3.5 3.8 4.0
I (A)
FM
V (V)
FM
Figure 7. Junction capacitance versus reverse
voltage applied
(typical values)
Figure 8. Junction capacitance versus
frequency (typical values)
0.0
0.5
1.0
1.5
2.0
012345
V
R
(V)
F = 1 MHz
V = 30 mV
V= 0V
T = 25 °C
OSC
r
j
RMS
C(pF)
V (V)
LINE
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P10

USBULC6-3F3K

Mfr. #:
Buy USBULC6-3F3K
Manufacturer:
STMicroelectronics
Description:
TVS DIODE 3V 4FLIPCHIP
Lifecycle:
New from this manufacturer.
Delivery:
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