2003 Dec 22 3
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 120 V
V
CEO
collector-emitter voltage open base − 100 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 1 A
I
CM
peak collector current limited by T
j max
− 3 A
I
B
base current (DC) − 300 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
T
amb
≤ 25 °C; note 2 − 480 mW
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
handbook, halfpage
040
T
amb
(°C)
P
tot
(mW)
80 160
500
0
400
120
300
200
100
MLE354
(1)
(2)
Fig.2 Power derating curves.
(1) FR4 PCB; 1 cm
2
copper mounting pad for collector.
(2) Standard footprint.
