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PBSS8110TVL

P1-P3P4-P6P7-P9P10-P12P13-P13
2003 Dec 22 6
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 80 V; I
E
= 0 − − 100 nA
V
CB
= 80 V; I
E
= 0; T
j
= 150 °C − − 50 μA
I
CES
collector-emitter cut-off current V
CE
= 80 V; V
BE
= 0 − − 100 nA
I
EBO
emitter-base cut-off current V
EB
= 4 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 10 V; I
C
= 1 mA 150 − −
V
CE
= 10 V; I
C
= 250 mA 150 − 500
V
CE
= 10 V; I
C
= 500 mA; note 1 100 − −
V
CE
= 10 V; I
C
= 1 A; note 1 80 − −
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA − − 40 mV
I
C
= 500 mA; I
B
= 50 mA − − 120 mV
I
C
= 1 A; I
B
= 100 mA; note 1 − − 200 mV
R
CEsat
equivalent on-resistance I
C
= 1 A; I
B
= 100 mA; note 1 − 165 200 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA − − 1.05 V
V
BEon
base-emitter turn-on voltage V
CE
= 10 V; I
C
= 1 A − − 0.9 V
f
T
transition frequency I
C
= 50 mA; V
CE
= 10 V;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − − 7.5 pF
2003 Dec 22 7
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
mle352
0
600
200
400
10
−1
110
I
C
(mA)
h
FE
10
2
10
3
10
4
(1)
(3)
(2)
Fig.5 DC current gain as a function of collector
current; typical values.
V
CE
= 10 V.
(1) T
amb
= 100 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MLE362
0
1.2
0.4
0.8
10
−1
110
I
C
(mA)
V
BE
(V)
10
2
10
3
10
4
(1)
(3)
(2)
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= 10 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
handbook, halfpage
1
10
−1
11010
2
10
3
10
4
10
−2
10
−1
MLE366
I
C
(mA)
V
CEsat
(V)
(1)
(2)
(3)
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 100 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
1
10
−1
11010
2
10
3
10
4
10
−2
10
−1
MLE353
I
C
(mA)
V
CEsat
(V)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
T
amb
= 25 °C.
2003 Dec 22 8
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110T
mle357
1
10
−1
10
10
−1
110
I
C
(mA)
V
CEsat
(V)
10
−2
10
−3
10
−4
10
−2
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 50.
T
amb
= 25 °C.
handbook, halfpage
10
10
−1
11010
2
10
3
10
4
10
−1
1
MLE363
I
C
(mA)
V
BEsat
(V)
(1)
(2)
(3)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 100 °C.
handbook, halfpage
10
10
−1
11010
2
10
3
10
4
10
−1
1
MLE364
I
C
(mA)
V
BEsat
(V)
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
T
amb
= 25 °C.
handbook, halfpage
10
−1
MLE365
1
10
−1
10
4
10
3
10
2
10 10
I
C
(mA)
V
BEsat
(V)
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 50.
T
amb
= 25 °C.
P1-P3P4-P6P7-P9P10-P12P13-P13

PBSS8110TVL

Mfr. #:
Buy PBSS8110TVL
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS8110T/TO-236AB/REEL 11" Q3
Lifecycle:
New from this manufacturer.
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