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TN5015H-6T

P1-P3P4-P6P7-P9
June 2017
DocID030698 Rev 1
1/9
This is information on a product in full production.
www.st.com
TN5015H-6T
High temperature 50 A SCRs
Datasheet - production data
Features
High junction temperature: T
j
= 150 °C
High noise immunity up to 150 °C
Gate triggering current I
GT
= 15 mA
Peak off-state voltage V
DRM
/V
RRM
= 600 V
High turn-on current rise dI/dt = 100 A/µs
ECOPACK
®
2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Solid state relays
Description
Packaged in a non-isolated TO-220AB, this
device offers high thermal performance during
operation of up to 50 A, thanks to a junction
temperature of up to 150 °C.
Its noise immunity (dV/dt = 500 V/μs) trade-off
versus gate triggering current (I
GT
= 15 mA) and
its turn-on current rise (dI/dt = 100 A/μs) allow the
design of robust and compact control circuits for
voltage regulators in motorbikes and industrial
drives, overvoltage crowbar protection, motor
control circuits in power tools and kitchen
appliances, and inrush current-limiting circuits.
Table 1: Device summary
Order code
V
DRM
/V
RRM
I
GT
TN5015H-6T
TO-220AB
600 V
15 mA
TO-220AB
A
K
G
K
A
G
A
Characteristics
TN5015H-6T
2/9
DocID030698 Rev 1
1 Characteristics
Table 2: Absolute maximum ratings (limiting values), T
j
= 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180 ° conduction angle)
T
c
= 120 °C
50
A
I
T(AV)
Average on-state current
(180 ° conduction angle)
T
c
= 122 °C
30
A
T
c
= 128 °C
25
T
c
= 134 °C
20
I
TSM
Non repetitive surge peak on-state current
( T
j
initial = 25 °C)
t
p
= 8.3 ms
493
A
t
p
= 10 ms
450
I
2
t
I
2
t value for fusing
t
p
= 10 ms
1012
A
2
s
dl/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
f = 60 Hz
100
A/µs
V
DRM
/V
RRM
Repetitive peak off-state voltage
T
j
= 150 °C
600
V
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage
t
p
= 10 ms
V
DRM
/V
RRM
+
100
V
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 150 °C
1
W
V
RGM
Maximum peak reverse gate voltage
5
V
T
stg
Storage junction temperature range
-40 to +150
°C
T
j
Maximum operating junction temperature
-40 to +150
°C
T
l
Maximum lead temperature soldering during 10 s
260
°C
Table 3: Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Symbol
Test conditions
Value
Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
Max.
15
mA
V
GT
Max.
1.3
V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ
T
j
= 150 °C
Min.
0.15
V
I
H
I
T
= 500 mA, gate open
Max.
60
mA
I
L
I
G
= 1.2 x I
GT
Max.
80
mA
dV/dt
V
D
= 402 V, gate open
T
j
= 150 °C
Min.
500
V/µs
t
gt
I
TM
= 100 A, V
D
= 402 V, I
G
= 30 mA, (dI
G
/dt) max = 0.2 A/µs
Typ.
1.9
µs
t
q
I
TM
= 100 A, V
D
= 402 V, (d
I
/dt)off = 30
A/µs, V
R
= 25 V, dV
D
/dt = 50 V/µs
T
j
= 150 °C
Typ.
85
µs
TN5015H-6T
Characteristics
DocID030698 Rev 1
3/9
Table 4: Static characteristics
Symbol
Test conditions
Value
Unit
V
TM
I
TM
= 100 A, t
p
= 380 µs
T
j
= 25 °C
Max.
1.65
V
V
TO
Threshold voltage
T
j
= 150 °C
Max.
0.85
R
D
Dynamic resistance
T
j
= 150 °C
Max.
9
mΩ
I
DRM
, I
RRM
V
D
= V
DRM
= V
RRM
T
j
= 25 °C
Max.
10
µA
T
j
= 150 °C
6
mA
Table 5: Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
Max.
0.6
°C/W
R
th(j-a)
Junction to ambient (DC)
Typ.
60
P1-P3P4-P6P7-P9

TN5015H-6T

Mfr. #:
Buy TN5015H-6T
Manufacturer:
STMicroelectronics
Description:
SCRs High temperature 50A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
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