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TN5015H-6T
P1-P3
P4-P6
P7-P9
Characteristics
TN5015H-
6T
4/9
DocID030698 Re
v 1
1.1
Characteristics
(curv
es)
Figure 1: Maximum average power dissipation
versus average
on
-state current
Figure 2: Average and DC on-state current versus
case temperature
Figure 3: Average and D.C. on state current versus
ambient temperature
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
0
10
20
30
40
50
0
5
10
15
20
25
30
35
40
45
50
I
T(
A
V)
(A
)
P(W
)
α
= 3
0
°
α
= 6
0
°
α
=
9
0
°
α
=
1
20
°
α
=
1
80
°
D.
C
0
10
20
30
40
50
60
0
25
50
7
5
100
125
150
I
T(A
V)
(A)
T
C
(°
C)
D.C
α
=
18
0°
α
=
30°
α
=
60°
α
=
90°
α
=
12
0°
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
T
A
(°
C
)
I
T(AV)
(A)
D.
C
α
= 1
80
°
K=
[Z
th
/R
th
]
1.0E-
03
1.0E
-02
1.0E-
01
1.0E
+00
1.0E-
03
1.0E-
02
1.0E-01
1.0E+0
0
1.0E+0
1
1.0E+02
1.0
E+03
tp
(s
)
Z
th(
j-a
)
Z
th(
j-c
)
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
T
j
(°C
)
I
G
T
,V
G
T
[T
j
]
/
I
G
T
,V
G
T
[T
j
=2
5 °
C]
I
G
T
V
G
T
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
-50
-2
5
0
25
50
75
10
0
125
150
T
j
(°
C
)
I
H
,
I
L
[T
j
]/
I
H
,
I
L
[T
j
=25
°C]
I
H
I
L
TN5015H-
6T
Characteristics
DocID030698 Re
v 1
5/9
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
Figure
10
: On-state characteristics
(maximum values)
Figure
11
: Relative variation of leakage current versus junction temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
90
95
100
105
110
1
15
120
12
5
13
0
135
140
145
150
T
j
(°C
)
d
V
/d
t
[ T
j
] / d
V
/d
t
[ T
j
= 150
°C ]
Above test equipment capability
V
D
= 402 V
0
100
20
0
30
0
400
50
0
1
10
10
0
10
00
N
um
b
er
o
f c
y
cle
s
I
TSM
(A)
Non repe
titive
T
j
initial = 25 °C
Repetitive
T
c
= 120 °C
1.0
E
-05
1.0
E
-04
1.0
E
-03
1.0
E
-02
1.0
E
-01
1.0
E
+0
0
25
50
75
100
125
1
50
V
D
RM
= V
RR
M
= 600 V
I
DRM
, I
RRM
[T
j
; V
DRM
, V
RRM
] / I
DRM
, I
RRM
[150 °C; 600 V]
T
j
(°C
)
Package
inform
ation
TN5015H-
6T
6/9
DocID030698 Re
v 1
2
Package informatio
n
In order to meet en
vironmental
requirem
ents, ST offers these dev
ices in different grades
of
ECOPACK
®
packages, dep
ending on their level of en
vironm
ental compliance. ECOPAC
K
®
specifications, grade d
efinitions and product st
atus are available at:
w
ww.st.com
.
ECOPACK
®
is an ST tradem
ark.
Epoxy meets UL94,
V0
Lead
-free, hal
ogen-fr
ee package
2.1
TO
-220AB package infor
mation
Figure
12
: TO-220AB (NIns. & Ins.) packa
ge outline
P1-P3
P4-P6
P7-P9
TN5015H-6T
Mfr. #:
Buy TN5015H-6T
Manufacturer:
STMicroelectronics
Description:
SCRs High temperature 50A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
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EMS
Payment:
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TN5015H-6T