MMH3111NT1
1
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
250--4000 MHz, 12 dB
22.5 dBm
GaAs HFET GPA
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
The MMH3111NT1 is a general purpose amplifier t hat is internally
input and output prematched. It is des igned for a broad range of Class A ,
small -- s ignal, high linearity, general purpose applications. It is s uitable
for applications with frequencies from 250 to 4000 MHz such as cellular,
PCS, WLL, PH S, C ATV, VH F, UH F, UMT S and general s mall--signal RF.
Features
Frequency: 250 to 4000 MHz
P1dB: 22.5 dBm @ 900 MHz
Small--Signal Gain: 12 dB @ 900 MHz
Third Order Output Intercept Point: 44 dBm @ 900 MHz
Single 5 V Supply
Internally Prematched to 50 Ohms
Internally Biased
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
SOT--89
Table 1. Typical Performance
(1)
Characteristic Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
G
p
12 11.3 10 dB
Input Return Loss
(S11)
IRL -- 1 4 -- 1 5 -- 1 6 dB
Output Return Loss
(S22)
ORL -- 1 4 -- 1 9 -- 1 4 dB
Power Output @1dB
Compression
P1dB 22.5 22 22 dBm
Third Order Output
Intercept Point
OIP3 44 44 42 dBm
1. V
DD
=5Vdc,T
A
=25C, 50 ohm system, application circuit tuned
for specified frequency.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
DD
6 V
Supply Current I
DD
300 mA
RF Input Power P
in
20 dBm
Storage Temperature Range T
stg
--65 to +150 C
Junction Temperature T
J
150 C
Table 3. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 150 mA, no RF applied
R
JC
37.5 C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MMH3111NT1
Rev. 4.1, 10/2014
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2007--2008, 2010--2012, 2014. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
Table 4. Electrical Characteristics (V
DD
= 5 Vdc, 900 MHz, T
A
=25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) G
p
11 12 dB
Input Return Loss (S11) IRL -- 1 4 dB
Output Return Loss (S22) ORL -- 1 4 dB
Power Output @ 1dB Compression P1dB 22.5 dBm
Third Order Output Intercept Point OIP3 44 dBm
Noise Figure NF 3.2 dB
Supply Current I
DD
120 150 190 mA
Supply Voltage V
DD
5 V
Table 5. Functional Pin Description
Pin
Number
Pin Function
1 RF
in
2 Ground
3 RF
out
/DC Supply
Table 6. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD 22--A114) 1A
Machine Model (per EIA/JESD 22--A115) A
Charge Device Model (per JESD 22--C101) IV
Table 7. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 C
Figure 1. Functional Diagram
32
1
2
MMH3111NT1
3
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
5
20
0
T
C
=85C
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
15
123
G
p
, SMALL--SIGNAL GAIN (dB)
-- 4 0 C
0
0
S22
f, FREQUENCY (GHz)
Figure 3. Input/Output Loss versus Frequency
-- 2 0
123
S11, S22 (dB)
24
8
13
10
P
out
, OUTPUT POWER (dBm)
Figure 4. Small--Signal Gain versus Output
Power
12
11
10
9
12 14
3.532.521.510.5
16
24
23
21
19
f, FREQUENCY (GHz)
Figure 5. P1dB versus Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
22
20
6
0
160
0
V
DD
, DRAIN VOLTAGE (V)
Figure 6. D rain Current versus Drain Voltage
140
100
20
15
I
DD
, DRAIN CURRENT (mA)
60
234
4
36
50
0
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
48
46
44
42
123
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
1816
G
p
, SMALL--SIGNAL GAIN (dB)
V
DD
=5Vdc
900 MHz
2140 MHz
1960 MHz
2600 MHz
3500 MHz
120
80
40
-- 1 0
S11
4
20
18
17
40
10
4
25C
-- 3 0
-- 4 0
22
38
V
DD
=5Vdc
V
DD
=5Vdc
V
DD
=5Vdc
V
DD
= 5 Vdc, 10 dBm per Tone
Two--Tone Measurements, 1 MHz Tone Spacing

MMH3111NT1

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
RF Amplifier 22DBM 12DB GPA SOT-89
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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