4
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
50 OHM TYPICAL CHARACTERISTICS
35
47
4
V
DD
, DRAIN VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Drain Voltage
45
43
41
39
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
4.2 4.4 54.6
100-- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0
43
48
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
46
45
44
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Figure 10. Third Order Intermodulation versus
Output Power
P
out
, OUTPUT POWER (dBm)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
10 12 14
-- 7 0
-- 2 5
-- 5 5
-- 6 5
-- 4 5
150
10
4
10
6
120
Figure 11. MTTF versus Junction Temperature
10
5
125 130 135 140 145
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
DD
=5Vdc,I
DD
= 150 mA
MTTF (YEARS)
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
123
NF, NOISE FIGURE (dB)
-- 7 0
-- 3 0
10
P
out
, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
-- 4 0
-- 5 0
-- 6 0
161412
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
19
47
V
DD
= 5 Vdc, f = 900 MHz, 10 dBm per Tone
Two--Tone Measurements, 1 MHz Tone Spacing
18
-- 3 5
11918
37
4.8
-- 3 0
-- 4 0
-- 5 0
-- 6 0
16
13 15 17
f = 900 MHz, 10 dBm per tone
Two--Tone Measurements, 1 MHz Tone Spacing
V
DD
=5Vdc
f = 900 MHz
1 MHz Tone Spacing
V
DD
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
V
DD
=5Vdc
