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IXTA3N120HV

P1-P3P4-P5
© 2015 IXYS CORPORATION, All Rights Reserved
DS100524B(5/15)
High Voltage
Power MOSFET
Features
High Voltage Package
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Blocking Voltage
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
IXTA3N120HV
V
DSS
= 1200V
I
D25
=3A
R
DS(on)
4.5
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 1200 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 1200 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C3A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
12 A
I
A
T
C
= 25C3A
E
AS
T
C
= 25C 700 mJ
dv/dt I
S
I
DM
, V
DD
V
DSS
,T
J
150C 5 V/ns
P
D
T
C
= 25C 200 W
T
J
- 55 ... +150 C
T
JM
150 C
T
stg
- 55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
Weight 2.5 g
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 1200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250A 2.5 5.0 V
I
GSS
V
GS
= 20V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 A
T
J
= 125C 1 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 4.5
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G = Gate D = Drain
S = Source Tab = Drain
G
S
TO-263
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N120HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 1.5 2.6 S
C
iss
1100 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 110 pF
C
rss
40 pF
t
d(on)
17 ns
t
r
15 ns
t
d(off)
32 ns
t
f
18 ns
Q
g(on)
42 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
8 nC
Q
gd
21 nC
R
thJC
0.62 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 3 A
I
SM
Repetitive, Pulse Width Limited by T
JM
12 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
700 ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 4.7 (External)
I
F
= I
S
, -di/dt = 100A/s, V
R
= 100V
TO-263 (HV) Outline
PIN: 1 - Gate
2 - Source
3 - Drain
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA3N120HV
Fig. 1. Output Characteristics @ T
J
= 25ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
024681012
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 3A
I
D
= 1.5A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
1
2
3
4
5
6
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 5. R
DS(on)
Normalized to I
D
= 1.5A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0123456
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTA3N120HV

Mfr. #:
Buy IXTA3N120HV
Manufacturer:
Littelfuse
Description:
MOSFET DISCMOSFET N-CH STD-HIVOLTAGE
Lifecycle:
New from this manufacturer.
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