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IXTA3N120HV

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N120HV
Fig. 7. Input Admittance
0
1
2
3
4
5
6
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
012345678
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
7
8
9
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 1.5A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig.12. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS( on)
Limit
10ms
DC
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA3N120HV
Fig. 13. Maximum Transient Thermal Impedance
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
IXYS REF: T_3N120(4U) 5-06-15-A
P1-P3P4-P5

IXTA3N120HV

Mfr. #:
Buy IXTA3N120HV
Manufacturer:
Littelfuse
Description:
MOSFET DISCMOSFET N-CH STD-HIVOLTAGE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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