7/23
M68AW256M
Figure 5. Block Diagram
AI04833
ROW
DECODER
A7
A17
(8)
DQ0
DQ15
(8)
COLUMN
DECODER
I/O CIRCUITS
A0 A6
E
W
G
MEMORY
ARRAY
V
CC
V
SS
LBLB
UB
(8)
(8)
UB
LB
UB
LB
M68AW256M
8/23
OPERATION
The device has four standard operating modes:
Output Disabled, Read, Write and Standby/Pow-
er-Down. These modes are determined by the
control inputs E
, W, G, LB and UB as summarized
in Table 2., Operating Modes.
Output Disabled. The Output Enable signal, G
,
provides high-speed tri-state control of DQ0-
DQ15, allowing fast read/write cycles on the I/O
data bus. The device is in Output Disabled mode
when Output Enable, G
, is High. In this mode, LB
and UB are Don’t care and DQ0-DQ15 are high
impedance.
Read Mode. The M68AW256M is in the Read
mode whenever Write Enable (W
) is High with
Output Enable (G
) Low, and Chip Enable (E) is as-
serted.
This provides access to data from eight or sixteen,
depending on the status of the signal UB
and LB,
of the 4,194,304 locations in the static memory ar-
ray, specified by the 18 address inputs.If only one
of the Byte Enable inputs is at V
IL
, the
M68AW256M is in Byte Read mode. If the two
Byte Enable inputs are at V
IL
, the M68AW256M is
in Word Read mode. So depending on the status
of the UB
and LB signals, valid data will be avail-
able on the lower eight, the upper eight or all six-
teen output pins, tAVQV after the last stable
address, providing G
is Low and E is Low.
If either of E
or G is asserted after t
AVQV
has
elapsed, data access will be measured from the
limiting parameter (t
ELQV
, t
GLQV
or t
BLQV
) rather
than the address. Data out may be indeterminate
at t
ELQX
, t
GLQX
and t
BLQX
but data lines will always
be valid at t
AVQV
.
Write Mode. The M68AW256M is in the Write
mode whenever the W
and E are Low. Either the
Chip Enable input (E
) or the Write Enable input
(W
) must be de-asserted during Address
transitions for subsequent write cycles. When E
(W) is Low, and UB or LB is Low, write cycle
begins on the W
(E)'s falling edge. When E and W
are Low, and UB = LB = High, write cycle begins
on the first falling edge of UB
or LB. Therefore,
address setup time is referenced to Write Enable,
Chip Enable or UB
/LB as t
AVWL
, t
AVEL
and t
AVBL
respectively, and is determined by the latter
occurring edge.
The Write cycle can be terminated by the earlier
rising edge of E
, W or UB/LB. If the Output is en-
abled (E
= Low, G = Low, LB or UB = Low), then
W
will return the outputs to high impedance within
t
WLQZ
of its falling edge. Care must be taken to
avoid bus contention in this type of operation. Data
input must be valid for t
DVWH
before the rising
edge of Write Enable, or for t
DVEH
before the rising
edge of E
, or for t
DVBH
before the rising edge of
UB
/LB whichever occurs first, and remain valid for
t
WHDX
, t
EHDX
and t
BHDX
respectively.
Standby/Power-Down. The M68AW256M has a
Chip Enable power down feature which invokes an
automatic standby mode whenever either Chip
Enable is de-asserted (E
= High) or LB and UB are
de-asserted (LB
and UB = High). An Output En-
able (G
) signal provides a high speed tri-state con-
trol, allowing fast read/write cycles to be achieved
with the common I/O data bus. Operational modes
are determined by device control inputs W
, E, LB
and UB as summarized in the Operating Modes ta-
ble (see Table 2).
Table 2. Operating Modes
Note: 1. X = V
IH
or V
IL
.
Operation E W G LB UB DQ0-DQ7 DQ8-DQ15 Power
Deselected
(Standby/Power-Down)
V
IH
XXXX Hi-Z Hi-Z
Standby (I
SB
)
XXX
V
IH
V
IH
Hi-Z Hi-Z
Standby (I
SB
)
Lower Byte Read
V
IL
V
IH
V
IL
V
IL
V
IH
Data Output Hi-Z
Active (I
CC
)
Lower Byte Write
V
IL
V
IL
X
V
IL
V
IH
Data Input Hi-Z
Active (I
CC
)
Output Disabled
V
IL
V
IH
V
IH
X X Hi-Z Hi-Z
Active (I
CC
)
Upper Byte Read
V
IL
V
IH
V
IL
V
IH
V
IL
Hi-Z Data Output
Active (I
CC
)
Upper Byte Write
V
IL
V
IL
X
V
IH
V
IL
Hi-Z Data Input
Active (I
CC
)
Word Read
V
IL
V
IH
V
IL
V
IL
V
IL
Data Output Data Output
Active (I
CC
)
Word Write
V
IL
V
IL
X
V
IL
V
IL
Data Input Data Input
Active (I
CC
)
Output Disabled
V
IH
X
V
IH
X X Hi-Z Hi-Z
Active (I
CC
)
9/23
M68AW256M
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assermbly), the ST ECOPACK
®
7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
3. Not exceeding 250°C for more than 30s, and peaking at 260°C.
4. Up to a maximum operating V
CC
of 3.6V only.
Symbol Parameter Value Unit
I
O
(1)
Output Current 20 mA
T
A
Ambient Operating Temperature –55 to 125 °C
T
STG
Storage Temperature –65 to 150 °C
T
LEAD
Lead Temperature during Soldering
(2)
260
(3)
°C
V
CC
Supply Voltage –0.5 to 4.6 V
V
IO
(4)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation 1 W

M68AW256ML70ND6T

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC SRAM 4M PARALLEL 44TSOP II
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet