74LVC332 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 20 March 2013 5 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25C.
10. Dynamic characteristics
[1] Typical values are measured at T
amb
=25C and V
CC
= 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
(C
L
V
CC
2
f
o
) = sum of the outputs
I
CC
supply
current
V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.110 - 40A
I
CC
additional
supply
current
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
=V
CC
0.6 V; I
O
=0A
- 5 500 - 5000 A
C
I
input
capacitance
V
CC
= 0 V to 3.6 V;
V
I
=GNDtoV
CC
-5.0- - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA, nB, nC to nY; see Figure 6
[2]
V
CC
= 1.65 V to 1.95 V 0.5 4.6 11.6 0.5 13.4 ns
V
CC
= 2.3 V to 2.7 V 1.0 2.7 6.6 1.0 7.6 ns
V
CC
= 2.7 V 1.1 2.8 7.0 1.1 8.1 ns
V
CC
= 3.0 V to 3.6 V 0.8 2.4 5.9 0.8 6.8 ns
C
PD
power dissipation
capacitance
per gate; V
I
=GNDtoV
CC
[3]
V
CC
= 1.65 V to 1.95 V - 8.1 - - - pF
V
CC
= 2.3 V to 2.7 V - 8.2 - - - pF
V
CC
= 3.0 V to 3.6 V - 9.2 - - - pF