74LVC332 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 20 March 2013 4 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.65 - 3.6 V
functional 1.2 - - V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature in free air 40 - +85 C
t/V input transition rise and fall
rate
V
CC
= 1.65 V to 2.7 V 0 - 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 - 10 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 1.2 V 1.08 - - 1.08 - V
V
CC
= 1.65 V to 1.95 V 0.65 V
CC
- - 0.65 V
CC
-V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 1.2 V - - 0.12 - 0.12 V
V
CC
= 1.65 V to 1.95 V - - 0.35 V
CC
-0.35 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 V
V
OH
HIGH-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
=1.65Vto3.6V
V
CC
0.2 - - V
CC
0.3 - V
I
O
= 4mA; V
CC
= 1.65 V 1.2 - - 1.05 - V
I
O
= 8mA; V
CC
= 2.3 V 1.8 - - 1.65 - V
I
O
= 12 mA; V
CC
= 2.7 V 2.2 - - 2.05 - V
I
O
= 18 mA; V
CC
= 3.0 V 2.4 - - 2.25 - V
I
O
= 24 mA; V
CC
= 3.0 V 2.2 - - 2.0 - V
V
OL
LOW-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
= 1.65 V to 3.6 V
- - 0.2 - 0.3 V
I
O
=4mA; V
CC
= 1.65 V - - 0.45 - 0.65 V
I
O
=8mA; V
CC
= 2.3 V - - 0.6 - 0.8 V
I
O
=12mA; V
CC
= 2.7 V - - 0.4 - 0.6 V
I
O
=24mA; V
CC
= 3.0 V - - 0.55 - 0.8 V
I
I
input leakage
current
V
CC
= 3.6 V; V
I
=5.5VorGND - 0.1 5-20 A
74LVC332 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 20 March 2013 5 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25C.
10. Dynamic characteristics
[1] Typical values are measured at T
amb
=25C and V
CC
= 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
(C
L
V
CC
2
f
o
) = sum of the outputs
I
CC
supply
current
V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.110 - 40A
I
CC
additional
supply
current
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
=V
CC
0.6 V; I
O
=0A
- 5 500 - 5000 A
C
I
input
capacitance
V
CC
= 0 V to 3.6 V;
V
I
=GNDtoV
CC
-5.0- - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA, nB, nC to nY; see Figure 6
[2]
V
CC
= 1.65 V to 1.95 V 0.5 4.6 11.6 0.5 13.4 ns
V
CC
= 2.3 V to 2.7 V 1.0 2.7 6.6 1.0 7.6 ns
V
CC
= 2.7 V 1.1 2.8 7.0 1.1 8.1 ns
V
CC
= 3.0 V to 3.6 V 0.8 2.4 5.9 0.8 6.8 ns
C
PD
power dissipation
capacitance
per gate; V
I
=GNDtoV
CC
[3]
V
CC
= 1.65 V to 1.95 V - 8.1 - - - pF
V
CC
= 2.3 V to 2.7 V - 8.2 - - - pF
V
CC
= 3.0 V to 3.6 V - 9.2 - - - pF
74LVC332 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 20 March 2013 6 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
11. AC waveforms
V
M
=1.5VatV
CC
2.7 V
V
M
=0.5 V
CC
at V
CC
<2.7V.
V
OL
and V
OH
are typical output voltage levels that occur
with the output load.
Test data is given in Table 8
. Definitions for test circuit:
R
L
= Load resistance.
C
L
= Load capacitance including jig and probe
capacitance.
R
T
= Termination resistance should be equal to output
impedance Z
o
of the pulse generator.
Fig 6. Input (nA, nB and nC) to output (nY)
propagation delays
Fig 7. Test circuit for measuring switching times
DDD
9
0
9
0
9
,
Q$Q%Q&
LQSXW
*1'
9
2+
Q
<RXWSXW
9
2/
W
3+/
W
3/+
V
M
V
M
t
W
t
W
10 %
90 %
0 V
V
I
V
I
negative
pulse
positive
pulse
0 V
V
M
V
M
90 %
10 %
t
f
t
r
t
r
t
f
001aaf615
V
CC
V
I
V
O
DUT
C
L
R
T
R
L
PULSE
GENERATOR
Table 8. Test data
Supply voltage Input Load
V
I
t
r
, t
f
C
L
R
L
1.2 V V
CC
2 ns 30 pF 1 k
1.65 V to 1.95 V V
CC
2 ns 30 pF 1 k
2.3 V to 2.7 V V
CC
2 ns 30 pF 500
2.7V 2.7V 2.5ns 50pF 500
3.0Vto3.6V 2.7V 2.5ns 50pF 500

74LVC332BQX

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Logic Gates Triple 3-input OR gate
Lifecycle:
New from this manufacturer.
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