APT20M22B2VFRG Datasheet APT20M22B2VFRG | P1-P3

050-5625 Rev A

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN TYP MAX

200

100

0.022

250

1000

±100

24

APT20M22B2VFR

200

100

400

±30

±40

520

4.16

-55 to 150

300

100

50

2500

APT20M22B2VFR

200V 100A 0.022Ω

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

On State Drain Current

2 5

(V

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1 5

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1 5

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

5

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

FREDFET

G

D

S

FREDFET

POWER MOS V

®

Power MOS V

®

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

• Lower Leakage • New T-MAX™ Package

(Clip-mounted TO-247 Package)

• Faster Switching

T-MAX™

APT20M22B2VFR

050-5625 Rev A

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

DYNAMIC CHARACTERISTICS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D

[Cont.])

Peak Diode Recovery

dv

/

dt

6

Reverse Recovery Time

(I

S

= -I

D

[Cont.],

di

/

dt

= 100A/µs)

Reverse Recovery Charge

(I

S

= -I

D

[Cont.],

di

/

dt

= 100A/µs)

Peak Recovery Current

(I

S

= -I

D

[Cont.],

di

/

dt

= 100A/µs)

Symbol

I

S

I

SM

V

SD

dv

/

dt

t

rr

Q

rr

I

RRM

UNIT

Amps

Volts

V/ns

ns

µC

Amps

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d

(on)

t

r

t

d

(off)

t

f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

R

G

= 0.6Ω

MIN TYP MAX

8500 10200

1950 2730

560 840

290 435

66 100

120 180

16 32

25 50

48 72

510

UNIT

pF

nC

ns

MIN TYP MAX

100

400

1.5

5

T

j

= 25°C 220

T

j

= 125°C 420

T

j

= 25°C 0.8

T

j

= 125°C 3.0

T

j

= 25°C 10

T

j

= 125°C 18

1

Repetitive Rating: Pulse width limited by maximum junction

4

Starting T

j

=

+25°C, L = 500µH, R

G

=

25Ω, Peak I

L

= 100A

temperature.

5

These dimensions are equal to the TO-247 without mounting hole

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

6

I

S

≤ -I

D

[Cont.],

di

/

dt

= 100A/µs, V

DD

≤

V

DSS

,

T

j

≤

150°C, R

G

= 2.0Ω,

3

See MIL-STD-750 Method 3471 V

R

= 200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

MIN TYP MAX

0.24

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

020406080100 0 1 2 3 4 5

02468 050100150200250300

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT20M22B2VFR

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

200

160

120

80

40

0

1.4

1.3

1.2

1.1

1.0

0.9

0.8

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

200

160

120

80

40

0

200

160

120

80

40

0

100

80

60

40

20

0

2.5

2.0

1.5

1.0

0.5

0.0

050-5625 Rev A

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

GS

=7V, 8V, 10V & 15V

6V

V

GS

=15V

V

GS

=10V

V

GS

=20V

T

J

= +25°C

T

J

= -55°C

T

J

= +125°C

T

J

= +125°C

T

J

= +25°C T

J

= -55°C

8V

10V

7V

6.5V

5.5V

4.5V

5V

4V

6V

6.5V

5.5V

4.5V

5V

4V

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

APT20M22B2VFRG

APT20M22B2VFRG

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