APT20M22B2VFRG

V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 5 10 50 100 200 .01 .1 1 10 50
0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0
APT20M22B2VFR
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
500
100
50
10
5
1
20
16
12
8
4
0
050-5625 Rev A
OPERATION HERE
LIMITED BY R
DS
(ON)
T
J
=+150°C T
J
=+25°C
C
rss
C
oss
C
iss
30,000
10,000
5,000
1,000
500
100
400
100
50
10
5
1
V
DS
=100V
V
DS
=40V
V
DS
=160V
I
D
= I
D
[Cont.]
10µS
1mS
10mS
100mS
DC
100µS
T-MAX™ Package Outline
5
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

APT20M22B2VFRG

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET Power FREDFET - MOS5
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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