IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBA12N300HV
IXBT12N300HV
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 12A, V
CE
= 10V, Note 1 6.5 10.8 S
C
ies
1290 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 56 pF
C
res
19 pF
Q
g(on)
62 nC
Q
ge
I
C
= 12A, V
GE
= 15V, V
CE
= 1000V 13 nC
Q
gc
8.5 nC
t
d(on)
64 ns
t
r
140 ns
t
d(off)
180 ns
t
f
540 ns
t
d(on)
65 ns
t
r
395 ns
t
d(off)
175 ns
t
f
530 ns
R
thJC
0.78 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, T
J
= 125°C
I
C
= 12A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10Ω
Resistive Switching Times, T
J
= 25°C
I
C
= 12A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 12A, V
GE
= 0V 2.1 V
t
rr
1.4 μs
I
RM
21 A
I
F
= 6A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
TO-263 (HV) Outline
TO-268 (HV) Outline
PIN: 1 - Gate
2 - Emitter
3 - Collector
PIN:
1 - Gate
2 - Emitter
3 - Collector
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.