© 2013 IXYS CORPORATION, All Rights Reserved
IXBA12N300HV
IXBT12N300HV
IXYS REF: B_12N300(4P)03-05-09
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
0
100
200
300
400
500
600
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
250
300
350
400
450
500
550
600
650
700
750
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r
- Nanoseconds
50
60
70
80
90
100
110
120
130
140
150
t
d
on
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 24A, 12A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
140
150
160
170
180
190
200
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 24A
I
C
= 12A
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
0
200
400
600
800
1000
1200
1400
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
f
- Nanoseconds
60
100
140
180
220
260
300
340
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
0
100
200
300
400
500
600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
I
C
= 12A
I
C
= 24A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
250
300
350
400
450
500
550
600
650
700
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
900
t
d
off
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 24A
I
C
= 12A
