IXGA20N120A3 Datasheet IXGA20N120A3, IXGH20N120A3, IXGP20N120A3 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1200 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C40 A

I

C110

T

C

= 110°C20 A

I

CM

T

C

= 25°C, 1ms 120 A

SSOA V

GE

= 15V, T

J

= 125°C, R

G

= 10Ω I

CM

= 40 A

(RBSOA) Clamped Inductive Load @V

CE

≤ ≤

≤ 960 V

P

C

T

C

= 25°C 180 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting Torque (TO-247 & TO-220) 1.13/10 Nm/lb.in.

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6mm (0.062 in.) from Case for 10s 260 °C

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 25 μA

T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 20A,

V

GE

= 15V, Note 1 2.3 2.5 V

T

J

= 125°C 2.5 V

DS100046A(11/09)

GenX3

TM

1200V IGBTs

V

CES

= 1200V

I

C110

= 20A

V

CE(sat)

≤≤

≤ 2.5V

Ultra-Low Vsat PT IGBTs for

up to 3 kHz Switching

IXGA20N120A3

IXGP20N120A3

IXGH20N120A3

Features

z

Optimized for Low Conduction Losses

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

z

Inrush Current Protection Circuits

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXGA)

G

E

C (Tab)

G

C

E

TO-220AB (IXGP)

C (Tab)

TO-247 (IXGH)

C (Tab)

G

C

E

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA20N120A3 IXGP20N120A3

IXGH20N120A3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 20A, V

CE

= 10V, Note 1 7 12 S

C

ies

1075 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 80 pF

C

res

27 pF

Q

g

50 nC

Q

ge

I

C

= 20A, V

GE

= 15V, V

CE

= 0.5 • V

CES

7.3 nC

Q

gc

23 nC

t

d(on)

16 ns

t

ri

44 ns

E

on

2.85 mJ

t

d(off)

290 ns

t

fi

715 ns

E

off

6.47 mJ

t

d(on)

16 ns

t

ri

50 ns

E

on

5.53 mJ

t

d(off)

310 ns

t

fi

1220 ns

E

off

10.10 mJ

R

thJC

0.69 °C/W

R

thCK

TO-220 0.50 °C/W

TO-247 0.21 °C/W

Inductive Load, T

J

= 125

°°

°C

I

C

= 20A, V

GE

= 15V

V

CE

= 960V, R

G

= 10Ω

Note 2

Inductive Load, T

J

= 25

°°

°C

I

C

= 20A, V

GE

= 15V

V

CE

= 960V, R

G

= 10Ω

Note 2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Collector

3 - Emitter 4 - Collector

TO-220 (IXGP) Outline

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(Clamp), T

J

or R

G

.

TO-263 (IXGA) Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-247 (IXGH) AD Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

IXGA20N120A3 IXGP20N120A3

IXGH20N120A3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

11

V

7V

5V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

0 4 8 12 16 20 24 28 32

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

9V

11V

13V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

5

10

15

20

25

30

35

40

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

11

V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 40A

I

C

= 20A

I

C

= 10A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1.5

2.5

3.5

4.5

5.5

6.5

7.5

56789101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 40

A

T

J

= 25ºC

10

A

20

A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

40

45

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGA20N120A3

IXGA20N120A3

Products related to this Datasheet