© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
8
10
12
14
16
18
20
22
24
26
10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
14
16
18
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
600
700
800
900
1000
1100
1200
1300
1400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
270
280
290
300
310
320
330
340
350
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
10 15 20 25 30 35 40 45 50
R
G
- Ohms
t
f
- Nanoseconds
150
200
250
300
350
400
450
500
550
600
650
700
t
d
off
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
4
6
8
10
12
14
16
18
20
22
24
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
E
off
- MilliJoules
2
3
4
5
6
7
8
9
10
11
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
2
4
6
8
10
12
14
16
18
20
22
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
10
11
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10Ω
,
V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
600
700
800
900
1000
1100
1200
1300
1400
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
f i
- Nanoseconds
280
290
300
310
320
330
340
350
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10Ω
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC