IXGA20N120A3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
5
10
15
20
25
30
35
40
45
200 300 400 500 600 700 800 900 1000 1100 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 20A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1MHz
C
ies
C
oes
C
res
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
8
10
12
14
16
18
20
22
24
26
10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
14
16
18
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
600
700
800
900
1000
1100
1200
1300
1400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
270
280
290
300
310
320
330
340
350
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
10 15 20 25 30 35 40 45 50
R
G
- Ohms
t
f
- Nanoseconds
150
200
250
300
350
400
450
500
550
600
650
700
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
4
6
8
10
12
14
16
18
20
22
24
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
E
off
- MilliJoules
2
3
4
5
6
7
8
9
10
11
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
2
4
6
8
10
12
14
16
18
20
22
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
10
11
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 960V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
600
700
800
900
1000
1100
1200
1300
1400
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
f i
- Nanoseconds
280
290
300
310
320
330
340
350
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
IXYS REF: G_20N120A3(4L)10-01-08
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
0
20
40
60
80
100
120
140
160
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
r i
- Nanoseconds
15
16
17
18
19
20
21
22
23
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on Switching Times
vs. Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 960V
I
C
= 20A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
10 15 20 25 30 35 40 45 50
R
G
- Ohms
t
r i
- Nanoseconds
5
10
15
20
25
30
35
40
45
50
55
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 20A
I
C
= 40A

IXGA20N120A3

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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