IRFP254NPBF Datasheet IRFP254NPBF | P1-P3

Document Number: 91213 www.vishay.com

S09-0006-Rev. A, 19-Jan-09 1

Power MOSFET

IRFP254N, SiHFP254N

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fully Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

these Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

J

= 25 °C, L = 3.1 mH, R

G

= 25 Ω, I

AS

= 14 A, V

GS

= 10 V.

c. I

SD

≤ 14 A, dI/dt ≤ 460 A/µs, V

DD

≤ V

DS

, T

J

≤ 175 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

V

DS

(V) 250

R

DS(on)

(Ω)V

GS

= 10 V 0.125

Q

g

(Max.) (nC) 100

Q

gs

(nC) 17

Q

gd

(nC) 44

Configuration Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

IRFP254NPbF

SiHFP254N-E3

SnPb

IRFP254N

SiHFP254N

ABSOLUTE MAXIMUM RATINGS T

C

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

250

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current V

GS

at 10 V

T

C

= 25 °C

I

D

23

A

T

C

= 100 °C 16

Pulsed Drain Current

a

I

DM

92

Linear Derating Factor 1.5 W/°C

Single Pulse Avalanche Energy

b

E

AS

300 mJ

Repetitive Avalanche Current

a

I

AR

14 A

Repetitive Avalanche Energy

a

E

AR

22 mJ

Maximum Power Dissipation T

C

= 25 °C P

D

220 W

Peak Diode Recovery dV/dt

c

dV/dt 7.4 V/ns

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

d

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91213

2 S09-0006-Rev. A, 19-Jan-09

IRFP254N, SiHFP254N

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/WCase-to-Sink, Flat, Greased Surface R

thCS

0.24 -

Maximum Junction-to-Case (Drain) R

thJC

-0.68

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 µA 250 - - V

V

DS

Temperature Coefficient ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.33 - V/°C

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 250 V, V

GS

= 0 V - - 25

µA

V

DS

= 200 V, V

GS

= 0 V, T

J

= 150 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 14 A

b

- - 0.125 Ω

Forward Transconductance g

fs

V

DS

= 25 V, I

D

= 14 A 15 - - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz, see fig. 5

- 2040 -

pFOutput Capacitance C

oss

- 260 -

Reverse Transfer Capacitance C

rss

-62-

Total Gate Charge Q

g

V

GS

= 10 V

I

D

= 14 A, V

DS

= 200 V,

see fig. 6 and 13

b

- - 100

nC

Gate-Source Charge Q

gs

--17

Gate-Drain Charge Q

gd

--

44

Turn-On Delay Time t

d(on)

V

DD

= 125 V, I

D

= 14 A,

R

G

= 3.6 Ω, see fig. 10

b

-14-

ns

Rise Time t

r

-34-

Turn-Off Delay Time t

d(off)

-37-

Fall Time t

f

-29-

Internal Drain Inductance L

D

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0-

nH

Internal Source Inductance L

S

-13-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--23

A

Pulsed Diode Forward Current

a

I

SM

--92

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 14 A, V

GS

= 0 V

b

--1.3V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= 14 A, dI/dt = 100 A/μs

- 210 310 ns

Body Diode Reverse Recovery Charge Q

rr

-1.72.6nC

Forward Turn-On Time t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

D

S

G

S

D

G

Document Number: 91213 www.vishay.com

S09-0006-Rev. A, 19-Jan-09 3

IRFP254N, SiHFP254N

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

0.1

1

10

100

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

To p

Bottom

4.5 V

20 µs PULSE WIDTH

T

J

= 25 °C

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

VGS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

To p

Bottom

4.5 V

20 µs PULSE WIDTH

T

J

= 175 °C

T

J

= 25 °C

T

J

= 175 °C

5.0

4.0

7.0

6.0

8.0

9.0

1

10

100

V

GS

, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

V

DS

= 50 V

20 µs PULSE WIDTH

I

D

= 23 A

V

GS

= 10 V

T

J

, Junction Temperature ( °C)

r

DS(on)

, Drain-to-Source On Resistance (Normalized)

20 40 60 80 100 120 140

160

0.0

1.0

2.0

3.0

-60 -40 -20 0

4.0

IRFP254NPBF

IRFP254NPBF

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