IRFP254NPBF Datasheet IRFP254NPBF | P4-P6

www.vishay.com Document Number: 91213

4 S09-0006-Rev. A, 19-Jan-09

IRFP254N, SiHFP254N

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

C

rss

C

oss

C

iss

1

10

100

1000

0

1000

2000

3000

4000

C, Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

020

40 60

80 100

0

4

8

12

16

20

Q

G

, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

I

D

= 14 A

V

DS

= 200 V

V

DS

= 125 V

V

DS

= 50 V

For Test Circuit

See Fig. 13

V

SD

, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

T

J

= 175 °C

T

J

= 25 °C

V

GS

= 0 V

100

0.4

0.8

0.6

1.0

1.2

0.1

1

10

0.2

10

100

1000

10000

0.1

10

1000

1

I

D

, Drain Current (A)

V

DS

, Drain-to-Source Voltage (V)

OPERATING IN THIS AREA LIMITED

BY R

DS(on)

10 ms

1 ms

100 µs

T

C

= 25 °C

T

J

= 175 °C

Single Pulse

100

1

Document Number: 91213 www.vishay.com

S09-0006-Rev. A, 19-Jan-09 5

IRFP254N, SiHFP254N

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

T

C

, Case Temperature (°C)

I

D

, Drain Current (A)

25

50

75 100

125

150

0

5

10

15

20

25

175

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

V

GS

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1

t

1

, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

0.01

0.02

0.05

0.10

0.20

D = 0.50

(THERMAL RESPONSE)

t

1

t

2

Notes:

1. Duty factor D = t

1

/ t

2

2. Peak T

J

= P

DM

x Z

thJC

+ T

C

P

DM

www.vishay.com Document Number: 91213

6 S09-0006-Rev. A, 19-Jan-09

IRFP254N, SiHFP254N

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test

A

R

G

I

AS

0.01

Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

Driver

A

15 V

V

GS

I

AS

V

DS

t

p

25

400

300

200

100

0

150

125

100

75

50

I

D

TOP 5.6 A

9.8 A

BOTTOM 14 A

Starting T

J

, Junction Temperature (°C)

E

AS

, Single Pulse Avalanche Energy (mJ)

500

600

175

Q

GS

Q

GD

Q

G

V

G

Charge

V

GS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

IRFP254NPBF

IRFP254NPBF

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