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NVJS4151PT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1 Publication Order Number:
NVJS4151P/D
NVJS4151P
Trench Power MOSFET
−20 V, −4.1 A, Single P−Channel, SC−88
Features
• Leading Trench Technology for Low R
DS(ON)
Extending Battery Life
• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Gate Diodes for ESD Protection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25 °C
I
D
−3.2
A
T
A
= 85 °C −2.3
t ≤ 5 s T
A
= 25 °C −4.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25 °C P
D
1.2 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−13 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−0.8 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
ESD Human Body Model (HBM) ESD 4000 V
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
R
q
JA
125
°C/W
Junction−to−Ambient − t ≤ 5 s
R
q
JA
75
Junction−to−Lead – Steady State
R
q
JL
45
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device Package Shipping
†
ORDERING INFORMATION
Top View
http://onsemi.com
SC−88 (SOT−363)
D
D
S
D
D
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
Typ I
D
Max
55 mW @ −4.5 V
70 mW @ −2.5 V
180 mW @ −1.8 V
−4.1 A
NVJS4151PT1G SC−88
(Pb−Free)
3000 / Tape & Reel
G
−20 V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC−88/SOT−363
CASE 419B
MARKING DIAGRAM &
PIN ASSIGNMENT
VTY M G
G
1
6
1
VTY = Device Code
M = Date Code
G = Pb−Free Package
DDS
DDG
(Note: Microdot may be in either location)
NVJS4151P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−12 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= −16 V,
V
DS
= 0 V
T
J
= 25°C −1.0 mA
T
J
= 85°C −5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±4.5 V ±1.5
mA
V
DS
= 0 V, V
GS
= ±12 V ±10 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.40 −1.2 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −2.9 A 55 67
mW
V
GS
= −2.5 V, I
D
= −2.4 A 70 85
V
GS
= −1.8 V, I
D
= −1.0 A 180 205
Forward Transconductance g
FS
V
GS
= −10 V, I
D
= −3.3 A 12 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −10 V
850
pF
Output Capacitance C
OSS
160
Reverse Transfer Capacitance C
RSS
110
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −3.3 A
10
nC
Gate−to−Source Charge Q
GS
1.5
Gate−to−Drain Charge Q
GD
2.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −1.0 A, R
G
= 6.0 W
0.85 ms
Rise Time t
r
1.7
Turn−Off Delay Time t
d(OFF)
2.7
Fall Time t
f
4.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −1.3 A,
T
J
= 25°C
−0.75 −1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100
A/ms,
I
S
= −1.3 A
63
ns
Charge Time T
a
9.0
Discharge Time T
b
54
Reverse Recovery Charge Q
RR
0.23 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NVJS4151P
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
1
2
3
4
02468
V
GS
= −1.8 V
V
GS
= −2.0 V
V
GS
= −2.4 V
V
GS
= −2.8 V to 6.0 V
V
GS
= −1.6 V
V
GS
= −1.0 V
V
GS
= −1.4 V
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
−I
D
, DRAIN CURRENT (A)
T
J
= 25°C
0
1
2
3
4
5
01234
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 2. On−Region Characteristics
−I
D
, DRAIN CURRENT (A)
V
DS
w −10 V
0
0.1
0.2
0.3
0.4
0.5
0246
I
D
= −3.3 A
T
J
= 25°C
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
RDS
(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= −1.8 V
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
RDS
(on)
, DRAIN−TO−SOURCE RESISTANCE
(W)
Figure 5. On−Resistance Variation with
Temperature
100
1000
10000
100000
048121620
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 150°C
V
GS
= −1.2 V
.
0
0.1
0.2
0.3
0.4
0.5
0.6
12345
V
GS
= −2.5 V
V
GS
= −4.5 V
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
= −4.5 V
I
D
= −2.9 A
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.7
0.9
1.1
1.3
1.5
1.7
−50 −25 0 25 50 75 100 125 150
P1-P3P4-P5

NVJS4151PT1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 4.2A 60MOHM PFET
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