NVJS4151PT1G

NVJS4151P
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
0
250
500
750
1000
1250
048121620
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
V
GS
= 0 V
T
J
= 25°C
C
ISS
V
DS
, DRAINTOSOURCE VOLTAGE (V)
V
GS
, GATETOSOURCE VOLTAGE (V)
Q
T
V
GS
V
DS
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
I
D
= 3.3 A
T
J
= 25°C
100
1000
10000
1 10 100
t
f
t
d(off)
t
r
t
d(on)
t, TIME (ns)
R
G
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
Gate Resistance
0
0.5
1
1.5
2
2.5
3
0.4 0.5 0.6 0.7 0.8 0.9
I
S
, SOURCE CURRENT (A)
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
0
1
2
3
4
5
024681012
0
3
6
9
12
15
Q
gd
Q
gs
NVJS4151P
http://onsemi.com
5
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd
M
123
A1
A
c
654
E
b
6X
DIM MIN NOM MAX
MILLIMETERS
A −−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b 0.15 0.20 0.25
C 0.08 0.15 0.22
D 1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb
H
B
SEATING
PLANE
DETAIL A
E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc
C
A2
6X
PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
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Phone: 81358171050
NVJS4151P/D
LITERATURE FULFILLMENT:
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NVJS4151PT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 4.2A 60MOHM PFET
Lifecycle:
New from this manufacturer.
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