EMIF02-USB04F3

October 2010 Doc ID 18144 Rev 1 1/7
7
EMIF02-USB04F3
3-line IPAD™, EMI filter including ESD protection
Features
EMI symmetrical (I/O) low-pass filter
high efficiency in EMI/ESD protection
lead-free package
very thin package
high reliability offered by monolithic integration
high reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
IEC 61000-4-2 level 4 (on external pins B1 and
C1):
±15 kV (air discharge)
±8 kV (contact discharge)
IEC 61000-4-2 level 1 (on internal pins):
±2 kV (air discharge)
±2 kV (contact discharge)
Applications
Where EMI filtering in ESD sensitive equipment is
required:
mobile phones and communication systems
computers, printers and MCU boards
Description
The EMIF02-USB04F3 chip is a highly integrated
audio filter device designed to suppress EMI/RFI
noise in all systems subjected to electromagnetic
interference.
This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up to 15 kV.
Figure 1. Pin configuration (bump side)
Figure 2. Configuration
TM: IPAD is a trademark of STMicroelectronics.
Lead-free Flip-Chip package
(9 bumps)
3 2 1
A
B
C
3 2 1
A
B1
A1
R1
R2
R5
A2
C1
C3
A3
C = 20 pF max
line
B2
R4 R3
C2 B3
www.st.com
Electrical characteristics EMIF02-USB04F3
2/7 Doc ID 18144 Rev 1
1 Electrical characteristics
Figure 3. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Internal pins (A2, A3, B2, B3, C2, C3):
ESD discharge IEC 61000-4-2, level 1, air discharge
ESD discharge IEC 61000-4-2, level 1, contact discharge
External pins (A1, B1, C1):
ESD discharge IEC 61000-4-2, level 4, air discharge
ESD discharge IEC 61000-4-2, level 4, contact discharge
±2
±2
±15
±8
kV
P
d
Line resistance power dissipation at 70 °C 60 mW
T
op
Operating temperature range - 40 to + 85 °C
T
stg
Storage temperature range - 55 to 150 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 7 V
I
RM
V
RM
= 3 V per line 100 nA
R
1,
R
2
Tolerance ± 5% 33 Ω
R
4,
R
5
Tolerance ± 20% 18.5 kΩ
R
3
1425 1490 1560 Ω
C
line
V
line
= 0 V, V
osc
= 30 mV, F = 1 MHz
(measured under zero light conditions)
20 pF
V
BR
V
RM
I
RM
I
R
V
I
I
RM
I
R
V
RM
V
BR
V
BR
V
RM
I
RM
I
R
V
I
I
RM
I
R
I
RM
I
R
V
RM
V
BR
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
BR
RM RM
C = Line capacitance
=
line
R Series resistance between Input and Output
I/O
EMIF02-USB04F3 Electrical characteristics
Doc ID 18144 Rev 1 3/7
Figure 4. S21 (dB) attenuation measurement
on C3-C1 and A3-B1
Figure 5. Analog crosstalk measurements on
C3 - A1
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
D+
D -
F = 335 MHz
C
- 60.00
- 50.00
- 40.00
- 30.00
- 20.00
- 10.00
0.00
dB
D+
-12.3
D-
-12.0
-19.5
D+
-20.4
D-
S21(dB)
F = 900 Mhz
S21(dB)
F = 1.8 Ghz
V= 0V
BIAS
f/Hz
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
D+/D-
- 60.00
- 50.00
- 40.00
- 30.00
- 20.00
- 10.00
0.00
XTalk
(dB)
XTalk (dB)
300 kHz < F < 3 GHz
>-12
f/Hz
V= 0V
BIAS
Figure 6. Digital crosstalk measurement on
C3-B1 in 50 environment
Figure 7. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
V
(in)
and on one output V
(out)
C2
C1
D-OUT
D+IN
1 V/Div.
100 mV/Div.
10 ns/Div.
10 ns/Div.
INPUT
OUTPUT
C2
C3
20 V/Div.
10 V/Div.
100 ns/Div
100 ns/Div
Figure 8. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
V
(in)
and on one output V
(out)
Figure 9. Line capacitance versus applied
voltage (typical values, line C1-B2)
C2
C3
20 V/Div.
10 V/Div.
100 ns/Div
100 ns/Div
INPUT
OUTPUT
0
2
4
6
8
10
12
14
16
18
0123456
C (pF)
V (V)
R

EMIF02-USB04F3

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EMI Filter Circuits 3-Line IPAD EMI ESD 15kV 20pF 7V VBr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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