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PMBF4393,215

P1-P3P4-P6P7-P9
DATA SHEET
Product specification April 1995
DISCRETE SEMICONDUCTORS
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
April 1995 2
NXP Semiconductors Product specification
N-channel FETs
PMBF4391;
PMBF4392; PMBF4393
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for low-power
chopper or switching applications in
industry.
PINNING
Note
1. Drain and source are
interchangeable.
Marking code
1 = drain
2 = source
3=gate
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
PMBF4391 PMBF4392 PMBF4393
Drain-source voltage V
DS
max. 40 40 40 V
Drain current
V
DS
=20 V; V
GS
=0 I
DSS
50 25 5 mA
Gate-source cut-off voltage
V
DS
=20 V; I
D
=1 nA V
(P)GS
420.5V
10 5 3 V
Drain-source resistance (on) at f = 1 kHz
I
D
=0; V
GS
=0 R
ds on
30 60 100
Feedback capacitance at f = 1 MHz
V
GS
= 12 V; V
DS
=0 C
rs
3.5 3.5 3.5 pF
Turn-off time
V
DD
=10 V; V
GS
=0
I
D
=12 mA; V
GSM
= 12 V t
off
20 ns
I
D
= 6 mA; V
GSM
= 7 V t
off
35 ns
I
D
= 3 mA; V
GSM
= 5 V t
off
50 ns
April 1995 3
NXP Semiconductors Product specification
N-channel FETs
PMBF4391; PMBF4392;
PMBF4393
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS
T
j
=25 C unless otherwise specified
Drain-source voltage V
DS
max. 40 V
Drain-gate voltage V
DGO
max. 40 V
Gate-source voltage V
GSO
max. 40 V
Gate current (DC) I
G
max. 50 mA
Total power dissipation up to T
amb
=40 C
(1)
P
tot
max. 250 mW
Storage temperature range T
stg
65 to 150 C
Junction temperature T
j
max. 150 C
From junction to ambient
(1)
R
th j-a
=430K/W
Gate-source voltage
I
G
= 1 mA; V
DS
= 0 V
GSon
1V
Gate-source cut-off current
V
DS
=0 V; V
GS
=20 V I
GSS
0.1 nA
V
DS
=0 V; V
GS
=20 V; T
amb
=150 C I
GSS
0.2 A
PMBF4391 PMBF4392 PMBF4393
Drain current
V
DS
= 20 V; V
GS
=0
I
DSS
50
150
25
75
5
30
mA
mA
Gate-source breakdown voltage
I
G
=1A; V
DS
=0 V
(BR)GSS
40 40 40 V
Gate-source cut-off voltage
I
D
= 1 nA; V
DS
= 20 V
V
(P)GS
4
10
2
5
0.5
3
V
V
Drain-source voltage (on)
I
D
=12 mA; V
GS
=0 V
DSon
0.4  V
I
D
= 6 mA; V
GS
=0 V
DSon
0.4 V
I
D
= 3 mA; V
GS
=0 V
DSon
 0.4 V
Drain-source resistance (on)
I
D
=0; V
GS
= 0; f = 1 kHz; T
amb
=25 Cr
ds on
30 100
Drain cut-off current
V
GS
=12 V V
DS
= 20 V I
DSX
0.1  nA
V
GS
=7 V I
DSX
 0.1 nA
V
GS
=5 V I
DSX
 0.1 nA
V
GS
=12 V V
DS
= 20 V; T
amb
= 150 CI
DSX
0.2  A
V
GS
=7 V I
DSX
 0.2 A
V
GS
=5 V I
DSX
 0.2 A
P1-P3P4-P6P7-P9

PMBF4393,215

Mfr. #:
Buy PMBF4393,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors JFET N-CH 40V 100mA
Lifecycle:
New from this manufacturer.
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