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PMBF4393,215

P1-P3P4-P6P7-P9
April 1995 4
NXP Semiconductors Product specification
N-channel FETs
PMBF4391; PMBF4392;
PMBF4393
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
y-parameters (common source)
V
DS
=20 V; V
GS
= 0; f = 1 MHz; T
amb
=25 C
PMBF4391 PMBF4392 PMBF4393
Input capacitance C
is
14 14 14 pF
Feedback capacitance
V
GS
=12 V ; V
DS
=0 C
rs
3.5  pF
V
GS
=7 V ;V
DS
=0 C
rs
 3.5 pF
V
GS
=5 V ;V
DS
=0 C
rs
 3.5 pF
Switching times
V
DD
=10 V ; V
DS
=0
Conditions I
D
and V
GSoff
I
D
=12 6 3 mA
V
GS off
=12 7 5 V
R
L
= 750 1550 3150
Rise time t
r
555ns
Turn on time t
on
15 15 15 ns
Fall time t
f
15 20 30 ns
Turn off time t
off
20 35 50 ns
Fig.2 Switching times waveforms.
handbook, full pagewidth
MBK288
−V
GS off
t
off
t
f
V
GS
= 0 V
V
i
V
o
10%
90%
90%
10%
t
on
t
r
April 1995 5
NXP Semiconductors Product specification
N-channel FETs
PMBF4391; PMBF4392;
PMBF4393
Pulse generator:
Fig.3 Test circuit.
handbook, halfpage
MBK289
50 Ω
R
L
DUT
10 μF
1 μF
V
DD
10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
t
r
0.5 ns
t
f
0.5 ns
t
p
=100s
=0.01
Oscilloscope:
R
i
=50
Fig.4 Power derating curve.
handbook, halfpage
0
T
amb
(°C)
P
tot
(mW)
300
200
100
0
40 200
80 120 160
MDA245
April 1995 6
NXP Semiconductors Product specification
N-channel FETs
PMBF4391; PMBF4392;
PMBF4393
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w M
v M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
P1-P3P4-P6P7-P9

PMBF4393,215

Mfr. #:
Buy PMBF4393,215
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors JFET N-CH 40V 100mA
Lifecycle:
New from this manufacturer.
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