MG200Q2YS60A Datasheet MG200Q2YS60A | P1-P3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Dual IGBTMOD™

Compact IGBT

Series Module

200 Amperes/1200 Volts

MG200Q2YS60A

15/05

Description:

Powerex Dual IGBTMOD™

Compact IGBT Series Modules

are designed for use in switching

applications. Each module consists

of two IGBT Transistors in a half-

bridge conﬁ guration, with each

transistor having a reverse-

connected super-fast recovery

free-wheel diode. All components

and interconnects are isolated from

the heat sinking baseplate, offering

simpliﬁ ed system assembly and

thermal management.

Features:

£ Over-Current and

Over-Temperature Protection

£ Low V

CE(sat)

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control

£ Motion/Servo Control

£ UPS

£ Welding Power Supplies

£ Laser Power Supplies

Ordering Information:

Example: Select the complete

part number from the table below

-i.e. MG200Q2YS60A is a

1200V (V

CES

), 200 Ampere

Dual IGBTMOD™ Compact IGBT

Series Module.

Type Current Rating V

CES

Amperes Volts (x 20)

MG 200 60

Outline Drawing and Circuit Diagram

7

5

3

1

DETAIL "A"

A

B

L

M

E

C

D

F

G

Y

AA

BB

Q

X

J

H

K

E2 C1

C2E1

DETAIL "A"

8

6

4

2

5

6

7

4

1

2

3

E2

OT

F

O

F

O

C1

E1/C2

W

Z

U

V

P

N

R

Q

R S

1 G(L)

2 F

O

(L)

5 G(H)

6 F

O

(H)

3 E(L)

4 V

D

7 E(H)

8 OPEN

SIGNAL TERMINAL

T

Dimensions Inches Millimeters

A 4.80±0.04 122.0±1.0

B 1.97±0.01 50.0±0.3

C 1.61±0.03 41.0±0.8

D 4.33±0.01 110.0±0.3

E 2.44±0.04 62.0±1.0

F 2.32±0.02 59.0±0.5

G 4.69±0.02 119.0±0.5

H 0.60 15.24

J 0.63 16.0

K 0.51 13.0

L 0.24 6.0

M 0.22 Dia. 5.5 Dia.

N 1.42±0.03 36.0±0.8

Dimensions Inches Millimeters

P M6 M6

Q 0.79±0.03 20.0±0.8

R 1.02±0.03 26.0±0.8

S 1.44±0.03 36.7±0.8

T 0.24 Rad. 6.0 Rad.

U 0.02 0.64

V 0.60 15.3

W 0.41±0.03 10.5±0.8

X 1.02 -0.01/+0.04 26.0 -0.3/+1.0

Y 1.48 -0.02/+0.04 37.5 -0.5/+1.0

Z 0.01 Dia. 3.0 Dia.

AA 1.00±0.023 25.4±0.6

BB 0.10 2.54

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG200Q2YS60A

Dual IGBTMOD™

Compact IGBT Series Module

200 Amperes/1200 Volts

2 5/05

Absolute Maximum Ratings, T

j

= 25°C unless otherwise speciﬁed

Characteristics Symbol MG200Q2YS60A Units

Power Device Junction Temperature T

j

-20 to 150 °C

Storage Temperature T

stg

-40 to 125 °C

Operating Temperature Range T

ope

-20 ~ 100 °C

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M6 Main Terminal Screws — 40 in-lb

Module Weight (Typical) — 375 Grams

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V

ISO

2500 Volts

IGBT Inverter Sector

Collector-Emitter Voltage V

CES

1200 Volts

Gate-Emitter Voltage V

GES

±20 Volts

Collector Current (T

C

= 25°C) I

C

200 Amperes

Peak Collector Current (T

C

= 25°C) I

CP

400 Amperes

Emitter Current (T

C

= 25°C) I

E

200 Amperes

Peak Emitter Current (T

C

= 25°C) I

EM

400 Amperes

Collector Dissipation (T

C

= 25°C) P

C

2000 Watts

IGBT Control Sector

Control Voltage (OT) V

D

20 Volts

Fault Input Voltage VF

O

20 Volts

Fault Input Current IF

O

20 mA

Electrical and Mechanical Characteristics, T

j

= 25°C unless otherwise speciﬁed

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Gate Leakage Current I

GES

V

GE

= ±20V, V

CE

= 0V — — +3 / -4 mA

V

GE

= 10V, V

CE

= 0V — — 100 nA

Collector-Emitter Cutoff Current I

CES

V

CE

= 1200V, V

GE

= 0V — — 1.0 mA

Gate-Emitter Cutoff Voltage V

GE(off)

V

CE

= 5V, I

C

= 200mA 6.0 7.0 8.0 Volts

Collector-Emitter Saturation Voltage V

CE(sat)

V

GE

= 15V, I

C

= 200A, T

j

= 25°C — 2.4 2.8 Volts

V

GE

= 15V, I

C

= 200A, T

j

= 125°C — — 3.2 Volts

Input Capacitance C

ies

V

CE

= 10V, V

GE

= 0V, f = 1MHz — 15,000 — pF

Inductive Load t

d(on)

0.1 — 1.0 µs

Switching t

off

V

CC

= 600V, I

C

= 200A, — — 2.0 µs

Times t

f

V

GE

= ±15V, R

G

= 10Ω — — 0.5 µs

Reverse Recovery Time t

rr

— — 0.5 µs

Emitter-Collector Voltage V

EC

I

E

= 200A — 2.4 2.8 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG200Q2YS60A

Dual IGBTMOD™

Compact IGBT Series Module

200 Amperes/1200 Volts

35/05

Electrical and Mechanical Characteristics, T

j

= 25°C unless otherwise speciﬁed

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector

Fault Output Current O

C

V

GE

= 15V 240 — — A

Over-Temperature O

T

— 100 — 125 °C

Fault Output Delay Time t

d(Fo)

V

CC

= 600V, V

GE

= ±15V — — 8 µs

Thermal Characteristics

Characteristic Symbol Condition Min. Typ. Max. Units

Junction to Case Thermal Resistance R

th(j-c)Q

IGBT (Per 1/2 Module) — — 0.062 °C/Watt

R

th(j-c)D

FWDi (Per 1/2 Module) — — 0.136 °C/Watt

Contact Thermal Resistance R

th(c-f)

— — 0.013 — °C/Watt

Recommended Conditions for Use

Characteristic Symbol Condition Value Units

Supply Voltage V

CC

Applied across C1-E2 Terminals ≤750 Volts

Gate Voltage V

GE

— 14.8 ~ 17 Volts

Gate Resistance R

G

— ≥10 Ω

Switching Frequency f

C

— 0 ~ 20 kHz

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

0 5 10 15 20

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

100

200

300

0

400

100

200

300

0

400

12

6

0

2

4

8

10

0 53 41 2

COLLECTOR-EMITTER VOLTAGE, V

CE(sat)

, (VOLTS)

T

j

= 25°C

T

j

= 25°C

FREE-WHEEL DIODE CHARACTERISTICS

(TYPICAL)

0 52 3 41

V

GE

= 0V

T

j

= 25°C

T

j

= 125°C

Tj = -40°C

I

C

= 400A

I

C

= 200A

I

C

= 100A

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

0 5 10 15 20

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

12

6

0

2

4

8

10

T

j

= 125°C

I

C

= 400A

I

C

= 200A

I

C

= 100A

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

0 5 10 15 20

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

12

6

0

2

4

8

10

T

j

= -40°C

I

C

= 400A

I

C

= 200A

I

C

= 100A

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

100

200

300

0

400

0 53 41 2

COLLECTOR-EMITTER VOLTAGE, V

CE(sat)

, (VOLTS)

T

j

= 125°C

V

GE

= 20V

15V

12V

10V

9V

8V

V

GE

= 20V

15V

12V

10V

9V

8V

FORWARD CURRENT, I

F

, (AMPERES)

FORWARD VOLTAGE, V

F

, (VOLTS)

MG200Q2YS60A

MG200Q2YS60A

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