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MG200Q2YS60A

P1-P3P4-P6
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG200Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
200 Amperes/1200 Volts
4 5/05
10
4
10
3
10
2
0 20015010050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, t
f
, (µs)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
3
10
2
10
1
0 20015010050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, t
r
, (µs)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 20015010050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, t
d(off)
, (µs)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 20015010050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, t
d(on)
, (µs)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 252010 155
GATE RESISTANCE, R
G
, (Ω)
SWITCHING TIME, t
off
, (µs)
TURN-OFF TIME VS.
GATE RESISTANCE
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 252010 155
GATE RESISTANCE, R
G
, (Ω)
SWITCHING TIME, t
on
, (µs)
TURN-ON TIME VS.
GATE RESISTANCE
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 20015010050
COLLECTOR CURRENT, I
C
, (AMPERES)
86420 1210
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
100
200
300
400
T
j
= 25°C
T
j
= 125°C
T
j
= -40°C
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, t
off
, (µs)
TURN-OFF TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 20015010050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, t
on
, (µs)
TURN-ON TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
V
CE
= 5V
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG200Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
200 Amperes/1200 Volts
55/05
10
2
10
1
10
0
0 200100 15050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
off
, (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
0
10
2
10
1
SWITCHING LOSS, E
off
, (mJ/PULSE)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
0 2515 20105
GATE RESISTANCE, R
G
, (Ω)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
2
10
1
10
0
0 200100 15050
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
on
, (mJ/PULSE)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL )
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
0
10
2
10
1
SWITCHING LOSS, E
on
, (mJ/PULSE)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
0 2515105
GATE RESISTANCE, R
G
, (Ω)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
3
10
2
10
1
0 200100 15050
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
REVERSE RECOVERY CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
3
10
2
10
1
0 252010 155
GATE RESISTANCE, R
G
, (Ω)
SWITCHING TIME, t
r
, (µs)
RISE TIME VS.
GATE RESISTANCE
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 25°C
T
j
= 125°C
20
10
4
10
3
10
2
0 252010 155
GATE RESISTANCE, R
G
, (Ω)
SWITCHING TIME, t
d(off)
, (µs)
TURN-OFF DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 25°C
T
j
= 125°C
10
4
10
3
10
2
0 252010 155
GATE RESISTANCE, R
G
, (Ω)
SWITCHING TIME, t
d(on)
, (µs)
TURN-ON DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 25°C
T
j
= 125°C
10
3
10
2
10
1
0 252010 155
GATE RESISTANCE, R
G
, (Ω)
SWITCHING TIME, t
f
, (µs)
FALL TIME VS.
GATE RESISTANCE
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 25°C
T
j
= 125°C
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG200Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
200 Amperes/1200 Volts
6 5/05
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
iC
, (AMPERES)
0 400 800 1200 1600
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
10
3
10
1
10
0
10
2
V
GE
= ±15V
R
G
= 10Ω
T
j
≤ 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
0
4
8
12
16
20
500 1000 20001500
400V
200V
600V
V
CE
= 0V
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
GATE CHARGE, Q
G
, (nC)
COLLECTOR-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
0
200
400
600
800
1000
500 1000 20001500
I
C
= 200A
R
L
= 3Ω
T
j
= 25C
I
C
= 200A
R
L
= 3Ω
T
j
= 25C
TIME, (s)
TRANSIENT IMPEDANCE, Rth
(j-c)
10
-3
10
-2
10
-1
10
0
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
0
10
-2
10
-4
10
-3
10
-1
TIME, (s)
TRANSIENT IMPEDANCE, Rth
(j-c)
10
-3
10
-2
10
-1
10
0
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
0
10
-2
10
-4
10
-3
10
-1
SINGLE PULSE
STANDARD VALUE = R
th(j-c)
Q = 0.062°C/W
SINGLE PULSE
STANDARD VALUE = R
th(j-c)
D = 0.136°C/W
T
C
= 25°C T
C
= 25°C
10
1
10
0
10
-1
0 200100 15050
EMITTER CURRENT, I
E
, (AMPERES)EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY LOSS, E
dsw
, (mJ/PULSE)
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
10
3
10
2
10
1
0 200100 15050
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY TIME
(TYPICAL)
V
CC
= 600V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
10
-2
10
-1
10
0
10
1
10
2
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10
5
10
3
10
2
10
4
C
ies
C
oes
C
res
V
GE
= 0V
f = 1MHz
T
C
= 25°C
P1-P3P4-P6

MG200Q2YS60A

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Buy MG200Q2YS60A
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Description:
IGBT MOD CMPCT DUAL 1200V 200A
Lifecycle:
New from this manufacturer.
Delivery:
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