Philips Semiconductors
PHU11NQ10T
TrenchMOS™ standard level FET
Product data Rev. 01 — 28 May 2002 2 of 12
9397 750 09528
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 175 °C - 100 V
I
D
drain current (DC) T
mb
=25°C; V
GS
= 10 V - 10.9 A
P
tot
total power dissipation T
mb
=25°C - 57.7 W
T
j
junction temperature - 175 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 9 A; T
j
=25°C 150 180 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 175 °C; R
GS
=20kΩ - 100 V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;Figure 2 and 3 - 10.9 A
T
mb
= 100 °C; V
GS
=10V;Figure 2 - 7.7 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 43.6 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 57.7 W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 10.9 A
I
SM
peak source (diode forward) current T
mb
=25°C; t
p
≤ 10 µs - 43.6 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I
D
= 3.2 A;
t
p
= 0.2 ms; V
DD
≤ 15 V; R
GS
=50Ω;
V
GS
= 10 V; starting T
j
=25°C
-35mJ
