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PHU11NQ10T,127
P1-P3
P4-P6
P7-P9
P10-P12
Philips Semiconductors
PHU11NQ10T
T
renchMOS™ standard level FET
Product data
Rev
. 01 — 28 May 2002
7 of 12
9397 750 09528
© Koninklijk
e Philips Electronics N.V
. 2002. All r
ights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
=0V
;f=1M
H
z
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-source v
oltage; typical values.
03aj02
0
1
2
3
4
5
-60
0
60
120
180
T
j
(
°
C)
V
GS
(th
)
(V
)
mi
n
typ
max
03aj01
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
01
23
45
V
GS
(V
)
I
D
(A
)
typ
max
mi
n
03ai99
10
10
2
10
3
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
Philips Semiconductors
PHU11NQ10T
T
renchMOS™ standard level FET
Product data
Rev
. 01 — 28 May 2002
8 of 12
9397 750 09528
© Koninklijk
e Philips Electronics N.V
. 2002. All r
ights reserved.
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
I
D
= 11 A; V
DD
= 20 V
, 50 V
, 80 V
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
03ai98
0
4
8
12
16
0
0.4
0.8
1.2
1.6
V
SD
(V
)
I
S
(A
)
T
j
= 25
°
C
175
°
C
V
GS
= 0 V
03aj00
0
2
4
6
8
10
0
5
10
15
Q
G
(nC
)
V
GS
(V
)
I
D
= 11 A
T
j
= 25
°
C
V
DD
= 20 V
50 V
80 V
Philips Semiconductors
PHU11NQ10T
T
renchMOS™ standard level FET
Product data
Rev
. 01 — 28 May 2002
9 of 12
9397 750 09528
© Koninklijk
e Philips Electronics N.V
. 2002. All r
ights reserved.
9.
P
ac
kage outline
Fig 14.
SO
T533. (I-P
AK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT533
99-02-18
TO-251
0
2.5
5 mm
scale
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
UNIT
D
e
Q
L
c
e
1
A
2.285
mm
2.38
2.22
7.28
6.94
A
1
0.89
0.71
b
0.89
0.71
0.56
0.46
E
1
D
1
1.06
0.96
E
6.73
6.47
5.36
5.26
4.57
9.8
9.4
1.00
1.10
DIMENSIONS (mm are the original dimensions)
D
D
1
L
12
3
mounting
base
e
1
e
Q
b
A
E
E
1
A
1
c
w
M
P1-P3
P4-P6
P7-P9
P10-P12
PHU11NQ10T,127
Mfr. #:
Buy PHU11NQ10T,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 100V 10.9A SOT533
Lifecycle:
New from this manufacturer.
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