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MT18JDF51272PDZ-1G9K2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 SDRAM VLP RDIMM
DRAM Operating Conditions
PDF: 09005aef837c3c22
jdf18c256_512x72pdz.pdf – Rev. D 12/11 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAFT: 12/19/2011
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G)
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
768 693 648 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
918 873 828 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
540 540 450 mA
Precharge quiet standby current I
DD2Q
2
720 630 630 mA
Precharge standby current I
DD2N
2
810 720 630 mA
Precharge standby ODT current I
DD2NT
1
603 558 513 mA
Active power-down current I
DD3P
2
630 540 540 mA
Active standby current I
DD3N
2
810 720 720 mA
Burst read operating current I
DD4R
1
1368 1233 1098 mA
Burst write operating current I
DD4W
1
1413 1233 1098 mA
Refresh current I
DD5B
1
1638 1593 1548 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
144 144 144 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C
I
DD6ET
2
180 180 180 mA
All banks interleaved read current I
DD7
1
2313 2223 1863 mA
RESET low current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 SDRAM VLP RDIMM
I
DD
Specifications
PDF: 09005aef837c3c22
jdf18c256_512x72pdz.pdf – Rev. D 12/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAFT: 12/19/2011
Table 12: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
963 873 783 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
1053 1008 963 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
630 540 450 mA
Precharge quiet standby current I
DD2Q
2
720 630 540 mA
Precharge standby current I
DD2N
2
720 630 540 mA
Precharge standby ODT current I
DD2NT
1
558 513 468 mA
Active power-down current I
DD3P
2
720 630 540 mA
Active standby current I
DD3N
2
810 720 630 mA
Burst read operating current I
DD4R
1
1728 1548 1368 mA
Burst write operating current I
DD4W
1
1773 1593 1413 mA
Refresh current I
DD5B
1
2043 1908 1818 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C
I
DD6ET
2
270 270 270 mA
All banks interleaved read current I
DD7
1
4023 3573 3123 mA
RESET low current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 SDRAM VLP RDIMM
I
DD
Specifications
PDF: 09005aef837c3c22
jdf18c256_512x72pdz.pdf – Rev. D 12/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAFT: 12/19/2011
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

MT18JDF51272PDZ-1G9K2

Mfr. #:
Buy MT18JDF51272PDZ-1G9K2
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
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