ZXTP5401ZTA

Issue 1 - August 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTP5401Z
150V, SOT89, PNP High voltage transistor
Summary
BV
CEO
> -150V
BV
EBO
> -5V
I
C(cont)
= -600mA
P
D
= 1.2W
Complementary part number ZXTN5551Z
Description
A high voltage PNP transistor in a small outline surface mount package.
Features
•150V rating
SOT89 package
Applications
High voltage amplification
Ordering information
Device marking
P01
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTP5401ZTA 7 12 1000
C
E
B
C
E
Pinout - top view
C
B
ZXTP5401Z
Issue 1 - August 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight
copper, in still air conditions.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
-160 V
Collector-emitter voltage V
CEO
-150 V
Emitter-base voltage V
EBO
-5 V
Continuous collector current
(a)
I
C
-600 mA
Pulsed collector current I
CM
-2 A
Power dissipation at T
A
= 25°C
(a)
P
D
1.2 W
Linear derating factor 9.6 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a)
R
JA
°C/W
ZXTP5401Z
Issue 1 - August 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Typical characteristics

ZXTP5401ZTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 150V 0.6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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