ZXTP5401ZTA

P1-P3 P4-P6 P7-P8

ZXTP5401Z

Issue 1 - August 2007 4 www.zetex.com

© Zetex Semiconductors plc 2007

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

voltage

BV

CBO

-160 -270 V I

C

= -100␮A

Collector-emitter breakdown

voltage (base open)

BV

CEO

-150 -240 V

I

C

= -1mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.

Emitter-base breakdown

voltage

BV

EBO

-5 -8.1 V I

E

= -10␮A

Collector cut-off current I

CBO

<-1 -50 nA V

CB

= -120V

-50 ␮AV

CB

= -120V, T

amb

= 100°C

Collector-emitter saturation

voltage

V

CE(sat)

-50 -200 mV

I

C

= -10mA, I

B

= -1mA

(*)

-70 -500 mV

I

C

= -50mA, I

B

= -5mA

(*)

Base-emitter saturation

voltage

V

BE(sat)

-700 -1000 mV

I

C

= -10mA, I

B

= -1mA

(*)

-750 -1000 mV

I

C

= -50mA, I

B

= -5mA

(*)

Static forward current

transfer ratio

h

FE

50 135

I

C

= -1mA, V

CE

= -5V

(*)

60 135 240

I

C

= -10mA, V

CE

= -5V

(*)

50 130

I

C

= -50mA, V

CE

= -5V

(*)

Transition frequency f

T

100 MHz I

C

= -10mA, V

CE

= -10V

f

= 100MHz

Output capacitance C

OBO

6pF

V

CB

= -10V, f

= 1MHz

(*)

Delay time t

(d)

386 ns V

CC

= -10V. I

C

= -100mA,

I

B1

= I

B2

= -10mA

Rise time t

(r)

202 ns

Storage time t

(s)

1720 ns

Fall time t

(f)

275 ns

ZXTP5401Z

Issue 1 - August 2007 5 www.zetex.com

© Zetex Semiconductors plc 2007

Charateristics

V

CE(sat)

vI

C

I

C

-

Collector Current (Amps)

V

C

E

(

s

a

t

)

-

(

V

o

l

t

s

)

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

vI

C

V

BE(sat)

vI

C

I

C

-

Collector Current (Amps)

V

BE(on)

vI

C

h

F

E

-

N

o

r

m

a

l

i

s

e

d

G

a

i

n

(

%

)

V

B

E

(

s

a

t

)

-

(

V

o

l

t

s

)

V

B

E

-

(

V

o

l

t

s

)

20

40

60

80

100

0

-1

-0.2

-0.4

-0.6

-0.8

-0.0001

-0.001

-0.01 -0.1

I

C

/I

B

=10

V

CE

=-10V

-0.0001

-0.001

1

-0.01 -0.1

-0.6

-0.0001

-0.001

-1

-0.01

-0.1

-0.8

-1.0

-1.2

-1.4

-0.6

-1

-0.0001

-0.001

-0.01 -0.1

I

C

/I

B

=10

-1.0

-1.2

-1.4

-0.8

0

V

CE

=-10V

ZXTP5401Z

Issue 1 - August 2007 6 www.zetex.com

© Zetex Semiconductors plc 2007

Intentionally left blank

P1-P3 P4-P6 P7-P8

ZXTP5401ZTA

Mfr. #:

Buy ZXTP5401ZTA

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP 150V 0.6A

Lifecycle:

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