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TLP2200F

P1-P3P4-P6P7-P7
TLP2200
2014-09-01 1
TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
TLP2200
Isolated Bus Driver
High Speed Line Receiver
Microprocessor System Interfaces
MOS FET Gate Driver
Direct Replacement for HCPL−2200
The TOSHIBA TLP2200 consists of a GaAℓAs light emitting
diode and integrated high gain, high speed photodetector.
This unit is 8−lead DIP package.
The detector has a three state output stage that eliminates the
need for pull−up resistor, and built−in Schmitt trigger. The
detector IC has an internal shield that provides a guaranteed
common mode transient immunity of 1000V / μs.
Input current: I
F
= 1.6 mA
Power supply voltage: V
CC
= 4.5~20 V
Switching speed: 2.5MBd guaranteed
Common mode transient immunity: ±1000V / μs (min)
Guaranteed performance over temperature: 0~85°C
Isolation voltage: 2500 Vrms (min)
UL recognized: UL1577, file No. E67349
Truth Table
(positive logic)
Input Enable Output
H H Z
L H Z
H L H
L L L
Unit: mm
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: GND
6: V
E
(enable)
7: V
O
(output)
8: V
CC
V
CC
GND
SHIELD
1
2
3
4
8
7
6
5
Schematic
I
F
V
F
2
3
SHIELD
V
CC
V
O
V
E
GND
8
7
6
5
I
CC
I
O
I
E
Start of commercial production
1986/07
TLP2200
2014-09-01 2
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Input current, on I
F(ON)
1.6 ― 5 mA
Input current, off I
F(OFF)
0 ― 0.1 mA
Supply voltage V
CC
4.5 ― 20 V
Enable voltage high V
EH
2.0 ― 20 V
Enable voltage low V
EL
0 ― 0.8 V
Fan out (TTL load) N ― ― 4 ―
Operating temperature T
opr
0 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Absolute Maximum Ratings
(no derating required up to 70°C)
Characteristic Symbol Rating Unit
LED
Forward current I
F
10 mA
Peak transient forward current (Note 1) I
FPT
1 A
Reverse voltage V
R
5 V
Detector
Output current I
O
25 mA
Supply voltage V
CC
−0.5~20 V
Output voltage V
O
−0.5~20 V
Three state enable voltage V
E
−0.5~20 V
Total package power dissipation (Note 2) P
T
210 mW
Operating temperature range T
opr
−40~85 °C
Storage temperature range T
stg
−55~125 °C
Lead solder temperature (10s) (**) T
sol
260 °C
Isolation voltage
(AC 1minute, R.H. ≤ 60%,Ta = 25°C) (Note 3)
BV
S
2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width 1μs, 300 pps.
(Note 2) Derate 4.5mW / °C above 70°C ambient temperature.
(Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted
together
(**) 1.6mm below seating plane.
TLP2200
2014-09-01 3
Electrical Characteristics
(unless otherwise specified, Ta = 0~85°C, V
CC
= 4.5~20V
,
I
F(ON)
= 1.6~5mA, I
F(OFF)
= 0~0.1mA, V
EL
= 0~0.8V,V
EH
= 2.0~20V)
Characteristic Symbol Test Condition Min Typ.* Max Unit
Output leakage current
(V
O
> V
CC
)
I
OHH
I
F
= 5mA,
V
CC
= 4.5V
V
O
= 5.5V ― ― 100
μA
V
O
= 20V ― 2 500
Logic low output voltage V
OL
I
OL
= 6.4mA (4 TTL load) ― 0.32 0.5 V
Logic high output voltage V
OH
I
OH
= −2.6mA 2.4 3.4 ― V
Logic low enable current I
EL
V
E
= 0.4V ― −0.13 −0.32 mA
Logic high enable current I
EH
V
E
= 2.7V ― ― 20
μA V
E
= 5.5V ― ― 100
V
E
= 20V ― 0.01 250
Logic low enable voltage V
EL
― ― ― 0.8 V
Logic high enable voltage V
EH
― 2.0 ― ―
V
Logic low supply current I
CCL
I
F
= 0mA
V
E
= don't care
V
CC
= 5.5V ― 5 6.0
mA
V
CC
= 20V ― 5.6 7.5
Logic high supply current I
CCH
I
F
= 5mA
V
E
= don't care
V
CC
= 5.5V ― 2.5 4.5
mA
V
CC
= 20V ― 2.8 6.0
High impedance state
output current
I
OZL
I
F
= 5mA
V
E
= 2V
V
O
= 0.4V ― 1 −20
μA
I
OZH
I
F
= 0mA
V
E
= 2V
V
O
= 2.4V ― ― 20
V
O
= 5.5V ― ― 100
V
O
= 20V ― 0.01 500
Logic low short circuit
output current (Note 4)
I
OSL
I
F
= 0mA
V
O
= V
CC
= 5.5V 25 55 ―
mA
V
O
= V
CC
= 20V 40 80 ―
Logic high short circuit
output current (Note 4)
I
OSH
I
F
= 5mA
V
O
= GND
V
CC
= 5.5V −10 −25 ―
mA
V
CC
= 20V −25 −60 ―
Input current hysteresis I
HYS
V
CC
= 5V ― 0.05 ― mA
Input forward voltage V
F
I
F
= 5mA, Ta = 25°C ― 1.55 1.7 V
Temperature coefficient of
forward voltage
∆V
F
/ ∆Ta I
F
= 5mA ― −2.0 ― mV / °C
Input reverse breakdown
voltage
BV
R
I
R
= 10μA, Ta = 25°C 5 ― ― V
Input capacitance C
IN
V
F
= 0V, f = 1MHz, Ta = 25°C ―
45
― pF
Resistance (input−output) R
I−O
V
I−O
= 500V R.H. ≤ 60% (Note 3) 5×10
10
10
14
― Ω
Capacitance (input−output) C
I−O
V
I−O
= 0V, f = 1MHz (Note 3) ― 0.6 ― pF
(**) All typ. values are at Ta = 25°C, V
CC
= 5V, I
F(ON)
= 3mA unless otherwise specified.
P1-P3P4-P6P7-P7

TLP2200F

Mfr. #:
Buy TLP2200F
Manufacturer:
Toshiba
Description:
High Speed Optocouplers IC 3 STAGE OUTPUT
Lifecycle:
New from this manufacturer.
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