Nexperia
PMCM6501UPE
20 V, P-channel Trench MOSFET
PMCM6501UPE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 3 July 2017 4 / 15
aaa-026595
V
DS
(V)
-10
-1
-10
2
-10-1
-10
2
I
D
(A)
-10
-2
-10
-1
-1
-10
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C; 6 cm
2
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
100 µs
1 ms
10 ms
100 ms
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 180 225 K/W
[2] - 65 85 K/W
in free air
[3] - 75 95 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
t ≤ 5 s [3] - 45 55 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single sided-copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain, 4 layer, 1 cm
2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm
2
.
