Nexperia
PMCM6501UPE
20 V, P-channel Trench MOSFET
PMCM6501UPE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 3 July 2017 8 / 15
V
GS
(V)
0 -2.5-2.0-1.5-1.0-0.5
aaa-026600
-35
I
D
(A)
0
-30
-25
-20
-15
-10
-5
T
j
= 150 °C T
j
= 25 °C
V
DS
> I
D
x R
DSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-026601
2.0
a
0
1.5
1.0
0.5
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-026602
-0.4
-0.8
-1.2
V
GS(th)
(V)
0
-1.0
-0.6
-0.2
max
typ
min
I
D
= -250 µA; V
DS
= V
GS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
-10
-1
-10
2
-10-1
aaa-026603
10
4
C
(pF)
10
2
10
3
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
