APRIL 2013 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
TISP9110MDM Overvoltage Protector
Electrical Characteristics for any Section, T
A
= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
D
Off-state current
V
D
= V
DRM
, V
G1(Line)
= 0, V
G2
≥ +5 V
V
D
= V
DRM
, V
G2(Line)
= 0, V
G1
≥ -5 V
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
-5
-50
+5
+50
μA
I
G1(Line)
Negative-gate leakage current V
G1(Line)
= -220 V - 5 μA
I
G2(Line)
Positive-gate leakage current V
G2(Line)
= +220 V + 5 μA
V
G1L(BO)
Gate - Line impuls e breakover voltage
V
G1
= -100 V, I
T
= -100 A (see Note 6)
V
G1
= -100 V, I
T
= -30 A
2/10 μs
10/1000 μs
-15
-11
V
V
G2L(BO)
Gate - Line impuls e breakover voltage
V
G2
= +100 V, I
T
= +100 A (see Note 6)
V
G2
= +100 V, I
T
= +30 A
2/10 μs
10/1000 μs
+15
+11
V
I
H
- Negative holding current V
G1
= -60 V, I
T
= -1 A, di/dt = 1 A/ms -150 mA
I
G1T
Negative-gate trigger current I
T
=-5A, t
p(g)
≥20μs, V
G1
= -60 V + 5 mA
I
G2T
Positive-gate trigger current I
T
=5A, t
p(g)
≥20μs, V
G2
= 60 V - 5 mA
C
O
Line - Ground off-state capacitance f = 1 MHz, V
D
= -3 V, G1 & G2 open circuit 33 pF
NOTE: 6. Voltage measurements should be made with an oscillosc ope with limited bandw idth (20 MHz) to avoid high frequency noise.
Rating Symbol Value Unit
Repetitive peak off-state voltage
V
G1(Line)
=0, V
G2
≥ +5 V
V
G2(Line)
=0, V
G1
≥-5 V
V
DRM
-120
+120
V
Non-repetitive peak impulse current (see Notes 1, 2, 3 and 4)
I
PPSM
±150
±80
±50
A
2/10 μs (Telcordia GR-1089-CORE)
5/310 μs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 ms)
10/1000 μs (T elcordia GR-1089-CORE)
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 5)
I
TSM
9.0
5.0
1.7
A
0.2 s
1 s
900 s
Maximum negative battery supply voltage V
G1M
-110 V
Maximum positive battery supply voltage V
G2M
+110 V
Maximum differential battery supply voltage
V
(BAT)M
220 V
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied to either of the Line to Ground terminal pairs. Additionally, both terminal pairs may have
their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of a
single terminal pair).
3. Rated currents only apply if pins 6 & 7 (Ground) are connected together.
4. Applies for the following bias conditions: V
G1
= -20 V to -110 V, V
G2
= 0 V to +110 V.
5. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
