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STB200NF03T4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
February 2007 Rev 4 1/18
18
STP200NF03
STB200NF03 - STB200NF03-1
N-channel 30V - 0.0032Ω - 120A - D
2
PAK/I
2
PA K /TO -220
STripFET™ III Power MOSFET
General features
■ Standard threshold drive
■ 100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STP200NF03 30V <0.0037Ω 120A
(1)
1. Current Limited by Package
STB200NF03 30V <0.0037Ω 120A
(1)
STB200NF03-1 30V <0.0037Ω 120A
(1)
D
2
PAK
1
2
3
1
3
1
2
3
I
2
PAK
TO-220
www.st.com
Order codes
Part number Marking Package Packaging
STB200NF03T4 B200NF03 D
2
PAK Tape & reel
STB200NF03-1 B200NF03 I
2
PA K Tu be
STP200NF03 P200NF03 TO-220 Tube
Contents STP200NF03 - STB200NF03 - STB200NF03-1
2/18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STP200NF03 - STB200NF03 - STB200NF03-1 Electrical ratings
3/18
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)30 V
V
GS
Gate- source voltage ± 20 V
I
D
(1)
1. Value limited by package
Drain current (continuous) at
T
C
= 25°C
120 A
I
D
(1)
Drain current (continuous) at
T
C
= 100°C
120 A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 480 A
P
tot
Total dissipation at T
C
= 25°C 300 W
Derating factor 2.0 W/°C
dv/dt
(3)
3. I
SD
≤120A, di/dt ≤ 400A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 1.5 V/ns
E
AS
(4)
4. Starting T
j
= 25 °C, I
D
= 60A, V
DD
= 25V
Single pulse avalanche energy 1.45 J
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction
temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Rthj-pcb Thermal resistance junction-pcb see curve 13 and 14
T
J
Maximum lead temperature for soldering purpose
(1)
1. for 10 sec. 1.6mm from case
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

STB200NF03T4

Mfr. #:
Buy STB200NF03T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 120 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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