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STB200NF03T4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics
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Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs. temperature
Figure 10. Normalized on resistance vs.
temperature
Figure 11. Normalized B
VDSS
vs. temperature Figure 12. Source-drain diode forward
characteristics
Electrical characteristics STP200NF03 - STB200NF03 - STB200NF03-1
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Figure 13. Thermal resistance rthj-a vs. PCB
copper area
Figure 14. Max power dissipation vs. PCB
copper area
Figure 15. Power Derating vs. Tc Figure 16. Max Id Current vs. Tc
Figure 17. Allowable Iav vs. Time in Avalanche
STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics
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The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
P
D(AVE)
= 0.5 * (1.3 * BV
DSS
* I
AV
)
E
AS(AR)
= P
D(AVE)
* t
AV
Where:
I
AV
is the Allowable Current in Avalanche
P
D(AVE)
is the Average Power Dissipation in Avalanche (Single Pulse)
t
AV
is the Time in Avalanche
To de rate above 25
o
C, at fixed I
AV
, the following equation must be applied:
I
AV
= 2 * (T
jmax
- T
CASE
)/ (1.3 * BV
DSS
* Z
th
)
Where:
Z
th
= K * R
th
is the value coming from Normalized Thermal Response at fixed pulse width
equal to T
AV
.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

STB200NF03T4

Mfr. #:
Buy STB200NF03T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 120 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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