PBSS9410PA,115 Datasheet PBSS9410PA,115 | P1-P3

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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

NPN complement: PBSS8510PA.

1.2 Features and benefits

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

 Exposed heat sink for excellent thermal and electrical conductivity

 Leadless small SMD plastic package with medium power capability

1.3 Applications

 Loadswitch

 Battery-driven devices

 Power management

 Charging circuits

 Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS9410PA

100 V, 2.7 A PNP low V

CEsat

(BISS) transistor

Rev. 01 — 11 May 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −100 V

collector current - - −2.7 A

peak collector current single pulse;

≤ 1ms

--−4A

CEsat

collector-emitter

saturation resistance

= −2.7 A;

= −135 mA

[1]

- 110 166 mΩ

Product data sheet Rev. 01 — 11 May 2010 2 of 15

NXP Semiconductors

PBSS9410PA

100 V, 2.7 A PNP low V

CEsat

(BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

Transparent top view

sym01

Table 3. Ordering information

Type number Package

Name Description Version

PBSS9410PA HUSON3 plastic thermal enhanced ultra thin small outline package;

no leads; three terminals; body 2 × 2 × 0.65 mm

SOT1061

Table 4. Marking codes

Type number Marking code

PBSS9410PA AG

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

collector-base voltage open emitter - −100 V

CEO

collector-emitter voltage open base - −100 V

EBO

emitter-base voltage open collector - −7V

collector current - −2.7 A

peak collector current single pulse;

≤ 1ms

- −4A

base current - −600 mA

tot

total power dissipation T

amb

≤ 25 °C

[1]

-500mW

[2]

-1W

[3]

-1.4W

[4]

-2.1W

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

PBSS9410PA,115

Mfr. #:

Buy PBSS9410PA,115

Manufacturer:

Nexperia

Description:

Bipolar Transistors - BJT 100V 2.7A PNP LOW VCESAT TRANSISTOR

Lifecycle:

New from this manufacturer.

Delivery:

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PBSS9410PA,115