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PBSS9410PA,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS9410PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 11 May 2010 6 of 15
NXP Semiconductors
PBSS9410PA
100 V, 2.7 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −80 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −0.5 A 180 295 -
I
C
= −1 A 170 260 -
I
C
= −2 A 100 150 -
I
C
= −3 A 15 25 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −45 −70 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −95 −150 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −125 −185 mV
I
C
= −2.7 A; I
B
= −135 mA
[1]
- −290 −450 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2.7 A; I
B
= −135 mA
[1]
- 110 166 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −10 mA
[1]
- −0.75 −0.9 V
I
C
= −2.7 A; I
B
= −135 mA
[1]
- −0.95 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.75 −0.9 V
t
d
delay time V
CC
= −9V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
=0.1A
-17-ns
t
r
rise time - 185 - ns
t
on
turn-on time - 202 - ns
t
s
storage time - 325 - ns
t
f
fall time - 190 - ns
t
off
turn-off time - 515 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f = 100 MHz
70 115 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 4050pF
PBSS9410PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 11 May 2010 7 of 15
NXP Semiconductors
PBSS9410PA
100 V, 2.7 A PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
006aac052
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
V
CE
(V)
0 −5−4−2 −3−1
006aac053
−2
−3
−1
−4
−5
I
C
(A)
0
−5
I
B
(mA) = −40
−30
−35
−25
−45 −50
−20
−15
−10
006aac054
−0.4
−0.8
−1.2
V
BE
(V)
0.0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
006aac055
−0.4
−0.8
−1.2
V
BEsat
(V)
0.0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
PBSS9410PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 11 May 2010 8 of 15
NXP Semiconductors
PBSS9410PA
100 V, 2.7 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aac056
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(2)
(3)
(1)
006aac057
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−2
−10
−1
−1
−10
V
CEsat
(V)
−10
−3
(1)
(3)
(2)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aac058
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aac059
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS9410PA,115

Mfr. #:
Buy PBSS9410PA,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 100V 2.7A PNP LOW VCESAT TRANSISTOR
Lifecycle:
New from this manufacturer.
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