OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTD40N03RT4

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
1 Publication Order Number:
NTD40N03R/D
NTD40N03R
Power MOSFET
45 A, 25 V, N−Channel DPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low R
DS(on)
to Minimize Conduction Loss
• Low C
iss
to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• These are Pb−Free Devices
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 Vdc
Gate−to−Source Voltage − Continuous V
GS
±20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Drain Current
− Continuous @ T
C
= 25°C, Chip
− Continuous @ T
A
= 25°C, Limited by Wires
− Single Pulse (tp ≤ 10 ms)
R
q
JC
P
D
I
D
I
D
I
D
3.0
50
45
32
100
°C/W
W
A
A
A
Thermal Resistance − Junction−to−Ambient
(Note 1)
− Total Power Dissipation @ T
A
= 25°C
− Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
71.4
2.1
9.2
°C/W
W
A
Thermal Resistance − Junction−to−Ambient
(Note 2)
− Total Power Dissipation @ T
A
= 25°C
− Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
100
1.5
7.8
°C/W
W
A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
175
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
45 AMPERES, 25 VOLTS
R
DS(on)
= 12.6 mW (Typ)
MARKING DIAGRAM
& PIN ASSIGNMENTS
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
D
S
G
YWW
T40
N03G
4 Drain
3
Source
1
Gate
2
Drain
N−CHANNEL
1
2
3
4
4 Drain
1
Gate
2
Drain
3
Source
YWW
T40
N03G
4
1
2
3
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Y = Year
WW = Work Week
T40N03 = Device Code
G = Pb−Free Package
CASE 369D
DPAK
(Straight Lead)
STYLE 2
NTD40N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V(br)
DSS
25
−
28
−
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current
(V
GS
= ±20 Vdc, V
DS
= 0 Vdc)
I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.7
−
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 10 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
R
DS(on)
−
−
18.6
12.6
23
16.5
mW
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 10 Adc)
g
FS
− 20 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
− 584 −
pF
Output Capacitance C
oss
− 254 −
Transfer Capacitance C
rss
− 99 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 10 Adc, R
G
= 3 W)
t
d(on)
− 4.5 −
ns
Rise Time t
r
− 19.5 −
Turn−Off Delay Time t
d(off)
− 16.7 −
Fall Time t
f
− 3.5 −
Gate Charge
(V
GS
= 4.5 Vdc, I
D
= 10 Adc,
V
DS
= 10 Vdc) (Note 3)
Q
T
− 5.78 −
nC
Q
1
− 2.1 −
Q
2
− 2.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 10 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
0.85
0.71
1.2
−
V
dc
Reverse Recovery Time
(I
S
= 10 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 20.4 −
ns
t
a
− 8.25 −
t
b
− 12.1 −
Reverse Recovery Stored Charge Q
RR
− 0.007 −
mC
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD40N03R
http://onsemi.com
3
1.8
1.6
1.2
1.4
1
0.8
0.6
1000
100
10,000
8
4
12
0
20
0.016
010
4
42
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.032
0.040
1284
0.024
0.016
0.008
0
16
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
20
−50 50250−25 75 125100
034215
012168204
0
0.008
0.024
0.040
0202515105
V
GS
= 2.6 V
6
8
12
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 10 V
V
GS
= 4.5 V
150
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
I
D
= 10 A
V
GS
= 10 V
0.032
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
20
16
8
16
8 V
4 V
2.8 V
3 V
3.2 V
6 V
T
J
= 150°C
T
J
= 150°C
3.4 V
3.5 V
10 V
P1-P3P4-P6P7-P7

NTD40N03RT4

Mfr. #:
Buy NTD40N03RT4
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 25V 7.8A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet