Temperature Sensor with Serial Presence-Detect EEPROM
Thermal Sensor Operations
The temperature from the integrated thermal sensor is monitored and converts into a
digital word via the I
2
C bus. System designers can use the user-programmable registers
to create a custom temperature-sensing solution based on system requirements. Pro-
gramming and configuration details comply with JEDEC standard No. 21-C page 4.7-1,
"Definition of the TSE2002av, Serial Presence Detect with Temperature Sensor."
Serial Presence-Detect EEPROM Operation
DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JE-
DEC standard JC-45, "Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Mod-
ules." These bytes identify module-specific timing parameters, configuration informa-
tion, and physical attributes. The remaining 128 bytes of storage are available for use by
the customer. System READ/WRITE operations between the master (system logic) and
the slave EEPROM device occur via a standard I
2
C bus using the DIMM’s SCL (clock)
SDA (data), and SA (address) pins. Write protect (WP) is connected to V
SS
, permanently
disabling hardware write protection. For further information refer to Micron technical
note TN-04-42, "Memory Module Serial Presence-Detect."
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L VLP RDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. E 9/15 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 7: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 8: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.283 1.35 1.45 V
1.425 1.5 1.575 V 1
V
REFCA(DC)
Input reference voltage command/
address bus
0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
V
REFDQ(DC)
I/O reference voltage DQ bus 0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
I
VTT
Termination reference current from
V
TT
–600 600 mA
V
TT
Termination reference voltage (DC) –
command/address bus
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V 2
I
I
Input leakage current;
Any input 0V V
IN
V
DD
; V
REF
input 0V V
IN
0.95V (All other pins
not under test = 0V)
Address in-
puts, RAS#,
CAS#, WE#,
S#, CKE, ODT,
BA, CK, CK#
µA 3
I
OZ
Output leakage current;
0V V
OUT
V
DD
; DQ
and ODT are disabled;
ODT is HIGH
DQ, DQS,
DQS#
–5 0 5 µA
I
VREF
V
REF
supply leakage current;
V
REFDQ
= V
DD/2
or V
REFCA
= V
DD/2
(All other pins not under test = 0V)
–18 0 18 µA
T
A
Module ambient
operating temperature
0 70 °C 4, 5
T
C
DDR3 SDRAM component case operat-
ing temperature
0 95 °C 4, 5, 6
Notes:
1. Module is backward-compatible with 1.5V operation. Refer to device specification for
details and operation guidance.
2. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
3. Inputs are terminated to V
DD
/2. Input current is dependent on terminating resistance se-
lected in register.
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L VLP RDIMM
Electrical Specifications
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. E 9/15 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
4. T
A
and T
C
are simultaneous requirements.
5. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on micron.com.
6. The refresh rate is required to double when 85°C < T
C
95°C.
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L VLP RDIMM
Electrical Specifications
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. E 9/15 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT18KDF1G72PZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
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