Table 6: Component-to-Module DQ Map (Continued)
Component
Reference
Number
Component
DQ Module DQ
Module Pin
Number
Component
Reference
Number
Component
DQ Module DQ
Module Pin
Number
U19 0 12 131 U20 0 4 122
1 13 132 1 5 123
2 14 137 2 6 128
3 15 138 3 7 129
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L VLP RDIMM
DQ Map
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. E 9/15 EN
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Functional Block Diagram
Figure 2: Functional Block Diagram
V
REFCA
V
SS
DDR3 SDRAM
DDR3 SDRAM
V
DD
Control, command and
address termination
V
DDSPD
SPD EEPROM/
Temperature sensor
V
TT
DDR3 SDRAM
DDR3 SDRAM
V
REFDQ
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ0
DQ1
DQ2
DQ3
U1
DQ
DQ
DQ
DQ
DQ4
DQ5
DQ6
DQ7
U20
DQ
DQ
DQ
DQ
DQ8
DQ9
DQ10
DQ11
U2
DQ
DQ
DQ
DQ
DQ12
DQ13
DQ14
DQ15
U19
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
U3
DQ
DQ
DQ
DQ
DQ20
DQ21
DQ22
DQ23
U18
DQ
DQ
DQ
DQ
DQ24
DQ25
DQ26
DQ27
U4
DQ
DQ
DQ
DQ
DQ28
DQ29
DQ30
DQ31
U17
DQ
DQ
DQ
DQ
DQ32
DQ33
DQ34
DQ35
U7
DQ
DQ
DQ
DQ
DQ36
DQ37
DQ38
DQ39
U14
DQ
DQ
DQ
DQ
DQ40
DQ41
DQ42
DQ43
U8
DQ
DQ
DQ
DQ
DQ44
DQ45
DQ46
DQ47
U13
DQ
DQ
DQ
DQ
DQ48
DQ49
DQ50
DQ51
U9
DQ
DQ
DQ
DQ
DQ52
DQ53
DQ54
DQ55
U12
DQ
DQ
DQ
DQ
DQ56
DQ57
DQ58
DQ59
U10
DQ
DQ
DQ
DQ
DQ60
DQ61
DQ62
DQ63
U11
DQ
DQ
DQ
DQ
CB4
CB5
CB6
CB7
U16
DQ
DQ
DQ
DQ
CB0
CB1
CB2
CB3
U5
V
SS
RS0#
DQS0
DQS0#
DQS1
DQS1#
DQS2
DQS2#
DQS3
DQS3#
DQS4
DQS4#
DQS5
DQS5#
DQS6
DQS6#
DQS7
DQS7#
DQS8
DQS8#
DQS9
DQS9#
DQS10
DQS10#
DQS11
DQS11#
DQS12
DQS12#
DQS13
DQS13#
DQS14
DQS14#
DQS15
DQS15#
DQS16
DQS16#
DQS17
DQS17#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
DM CS# DQS DQS#
ZQ
V
SS
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
R
e
g
i
s
t
e
r
a
n
d
P
L
L
S0#
BA[2:0]
A[15:0]
RAS#
CAS#
WE#
CKE0
ODT0
Par_In
RESET#
CK0
CK0#
RS0#: DDR3 SDRAM
RBA[2:0]: DDR3 SDRAM
RA[15:0]: DDR3 SDRAM
RRAS#: DDR3 SDRAM
RCAS#: DDR3 SDRAM
RWE#: DDR3 SDRAM
RCKE0: DDR3 SDRAM
RODT0: DDR3 SDRAM
Err_Out#
CK
CK#
DDR3 SDRAM
U6
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
RS#, RCKE, RA[15:0],
RRAS#, RCAS#, RWE#,
RODT, RBA[2:0]
CK
CK#
Command, control, address, and clock line terminations:
DDR3
SDRAM
V
TT
DDR3
SDRAM
V
DD
U15
A0
SPD EEPROM/
Temperature
sensor
A1 A2
SA0 SA1
SDA
SCL
EVT
EVENT#
DDR3 SDRAM
SA2
Note:
1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor
that is tied to ground. It is used for the calibration of the component’s ODT and output
driver.
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L VLP RDIMM
Functional Block Diagram
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. E 9/15 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
General Description
DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory mod-
ules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM mod-
ules use DDR architecture to achieve high-speed operation. DDR3 architecture is essen-
tially an 8n-prefetch architecture with an interface designed to transfer two data words
per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM mod-
ule effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the inter-
nal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers
at the I/O pins.
DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK
and CK# to capture commands, addresses, and control signals. Differential clocks and
data strobes ensure exceptional noise immunity for these signals and provide precise
crossing points to capture input signals.
Fly-By Topology
DDR3 modules use faster clock speeds than earlier DDR technologies, making signal
quality more important than ever. For improved signal quality, the clock, control, com-
mand, and address buses have been routed in a fly-by topology, where each clock, con-
trol, command, and address pin on each DRAM is connected to a single trace and ter-
minated (rather than a tree structure, where the termination is off the module near the
connector). Inherent to fly-by topology, the timing skew between the clock and DQS sig-
nals can be easily accounted for by using the write-leveling feature of DDR3.
Registering Clock Driver Operation
Registered DDR3 SDRAM modules use a registering clock driver device consisting of a
register and a phase-lock loop (PLL). The device complies with the JEDEC standard
"Definition of the SSTE32882 Registering Clock Driver with Parity and Quad Chip Se-
lects for DDR3 RDIMM Applications."
The register section of the registering clock driver latches command and address input
signals on the rising clock edge. The PLL section of the registering clock driver receives
and redrives the differential clock signals (CK, CK#) to the DDR3 SDRAM devices. The
register(s) and PLL reduce clock, control, command, and address signals loading by iso-
lating DRAM from the system controller.
Parity Operations
The registering clock driver includes an even parity function for checking parity. The
memory controller accepts a parity bit at the Par_In input and compares it with the data
received on A[15:0], BA[2:0], RAS#, CAS#, and WE#. Valid parity is defined as an even
number of ones (1s) across the address and command inputs (A[15:0], BA[2:0], RAS#,
CAS#, and WE#) combined with Par_In. Parity errors are flagged on Err_Out#.
Address and command parity is checked during all DRAM operations and during con-
trol word WRITE operations to the registering clock driver. For SDRAM operations, the
address is still propagated to the SDRAM even when there is a parity error. When writ-
ing to the internal control words of the registering clock driver, the write will be ignored
if parity is not valid. For this reason, systems must connect the Par_In pins on the
DIMM and provide correct parity when writing to the registering clock driver control
word configuration registers.
8GB (x72, ECC, SR) 240-Pin 1.35V DDR3L VLP RDIMM
General Description
PDF: 09005aef84b83d18
kdf18c1gx72pz.pdf - Rev. E 9/15 EN
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT18KDF1G72PZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union