FDS8333C Datasheet FDS8333C | P4-P6

FDS8333C Rev C (W)

Typical Characteristics: N-Channel

0

2

4

6

8

10

0 1 2 3

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

3.0V

6.0V

V

GS

= 10V

3.5V

4.5V

0.8

1

1.2

1.4

1.6

1.8

2

0 2 4 6 8 10

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 3.0V

10V

4.0V

4.5V

3.5V

6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 4.1A

V

GS

= 10V

0.05

0.1

0.15

0.2

0.25

2 4 6 8 10

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 2 A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

2

4

6

8

10

1.5 2 2.5 3 3.5 4

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

=-55

o

C

25

o

C

125

o

C

V

DS

=5V

0.0001

0.001

0.01

0.1

1

10

100

0.2 0.4 0.6 0.8 1 1.2

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS8333C

FDS8333C Rev C (W)

Typical Characteristics: N-Channel (continued)

0

2

4

6

8

10

0 1 2 3 4 5

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

I

D

= 4.1A

V

DS

= 5V

15V

10V

0

100

200

300

400

0 5 10 15 20 25 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

ISS

C

RSS

C

OSS

f = 1MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

DC

10s

1s

100ms

100

µ

s

R

DS(ON)

LIMIT

V

GS

= 10V

SINGLE PULSE

R

θJA

= 135

o

C/W

T

A

= 25

o

C

10ms

1ms

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θ

JA

= 135°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

FDS8333C

FDS8333C Rev C (W)

Typical Characteristics: P-Channel

0

2

4

6

8

10

0 1 2 3 4 5

-V

DS

, DRAIN-SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

-4.0V

-4.5V

V

GS

= -10V

-6.0V

-3.5V

0.5

1

1.5

2

2.5

3

0 2 4 6 8 10

-I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= -3.5V

-4.5V

-5.0V

-10V

-6.0V

-4.0V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= -3.4A

V

GS

=-10V

0

0.1

0.2

0.3

0.4

2 4 6 8 10

-V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= -1.7A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 13. On-Resistance Variation

withTemperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

0

1

2

3

4

5

1.5 2.5 3.5 4.5

-V

GS

, GATE TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

125

o

C

V

DS

= -5V

25

o

C

0.0001

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD , BODY DIODE FORWARD VOLTAGE (V)

-I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS8333C

FDS8333C

FDS8333C

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