IRF40DM229 Datasheet IRF40DM229 | P1-P3

IR MOSFET

StrongIRFET™

IRF40DM229

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

Benefits

 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dv/dt and di/dt Capability

 Lead-Free, RoHS Compliant

Base part number Package Type

Standard Pack Orderable Part Number

Form Quantity

IRF40DM229

DirectFET™ MF

Tape and Reel 4800 IRF40DM229

V

DSS

40V

R

DS(on)

typ.

1.4m

max

1.85m

I

D (Silicon Limited)

159A

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature

DirectFET™ ISOMETRIC



MF

DirectFET™ N-Channel Power MOSFET 

1

2016-3-2

DD

S

G

S

4 6 8 10 12 14 16 18 20

V

GS,

Gate -to -Source Voltage (V)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

m





)

I

D

= 97A

T

J

= 25°C

T

J

= 125°C

25 50 75 100 125 150

T

C

, Case Temperature (°C)

0

25

50

75

100

125

150

175

I

D

,

D

r

a

i

n

C

u

r

e

n

t

(

A

)



IRF40DM229

2

2016-3-2

Notes:

 Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 Used double sided cooling , mounting pad with large heatsink.

Absolute Maximum Ratings

 

Symbol Parameter Max. Units

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

159

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

101

A

I

DM

Pulsed Drain Current  636



P

D

@T

C

= 25°C

Maximum Power Dissipation 83

W

Linear Derating Factor 0.67

W/°C

V

GS

Gate-to-Source Voltage ± 20

V

T

J

Operating Junction and -55 to + 150

°C

T

STG

Storage Temperature Range

Avalanche Characteristics



E

AS (Thermally limited)

Single Pulse Avalanche Energy  72

E

AS (tested)

Single Pulse Avalanche Energy Tested Value 

195

I

AR

Avalanche Current 

See Fig.15,16, 23a, 23b

A

E

AR

Repetitive Avalanche Energy  mJ

Thermal Resistance

 

Symbol Parameter Typ. Max. Units

R



JA

Junction-to-Ambient  ––– 45

°C/W

R



JA

Junction-to-Ambient  12.5 –––

R



JA

Junction-to-Ambient  20 –––

R



JC

Junction-to-Case 

–––

1.5

R



J-PCB

Junction-to-PCB Mounted

1.0

–––

mJ

E

AS (Thermally limited)

Single Pulse Avalanche Energy 

169

Static @ T

J

= 25°C (unless otherwise specified)

  

Symbol Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– V V

GS

= 0V, I

D

= 250µA

V

(BR)DSS

/T

J

Breakdown Voltage Temp. Coefficient ––– 32 ––– mV/°C Reference to 25°C, I

D

= 1.0mA

R

DS(on)

Static Drain-to-Source On-Resistance ––– 1.4 1.85

m

V

GS

= 10V, I

D

= 97A 

––– 3.0 ––– V

GS

= 6.0V, I

D

= 49A 

V

GS(th)

Gate Threshold Voltage 2.2 2.8 3.9 V V

DS

= V

GS

, I

D

= 100µA

I

DSS

Drain-to-Source Leakage Current

––– ––– 1.0

µA

V

DS

= 40V, V

GS

= 0V

––– ––– 150 V

DS

= 40V, V

GS

= 0V, T

J

= 125°C

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 V

GS

= 20V

Gate-to-Source Reverse Leakage ––– ––– -100 V

GS

= -20V

R

G

Internal Gate Resistance ––– 1.0 –––



nA

 TC measured with thermocouple mounted to top (Drain) of part.

 Surface mounted on 1 in. square Cu

board (still air).

 Mounted to a PCB with small clip

heatsink (still air)



 Mounted on minimum footprint full size

board with metalized back and with

small clip heatsink (still air)



IRF40DM229

3

2016-3-2

D

S

G

Dynamic @ T

J

= 25°C (unless otherwise specified)

 

Symbol Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 87 ––– ––– S V

DS

= 10V, I

D

= 97A

Q

g

Total Gate Charge ––– 107 161

nC

I

D

= 97A

Q

gs

Gate-to-Source Charge ––– 30 –––

V

DS

=20V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 39 –––

V

GS

= 10V 

Q

sync

Total Gate Charge Sync. (Q

g

- Q

gd

) ––– 68 –––

t

d(on)

Turn-On Delay Time ––– 16 –––

ns

V

DD

= 20V

t

r

Rise Time ––– 66 –––

I

D

= 30A

t

d(off)

Turn-Off Delay Time ––– 54 –––

R

G

= 2.7

t

f

Fall Time ––– 54 ––– V

GS

= 10V 

C

iss

Input Capacitance ––– 5317 –––

pF

V

GS

= 0V

C

oss

Output Capacitance ––– 866 –––

V

DS

= 25V

C

rss

Reverse Transfer Capacitance ––– 575 ––– ƒ = 1.0MHz

C

oss

eff. (ER) Effective Output Capacitance (Energy Related) ––– 1037 ––– V

GS

= 0V, V

DS

= 0V to 32V 

C

oss

eff. (TR) Effective Output Capacitance (Time Related) ––– 1237 ––– V

GS

= 0V, V

DS

= 0V to 32V 

Diode Characteristics

 

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current

––– ––– 83

A

MOSFET symbol

(Body Diode) showing the

I

SM

Pulsed Source Current

––– ––– 636

integral reverse

(Body Diode)  p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.2 V T

J

= 25°C,I

S

= 97A, V

GS

= 0V

dv/dt Peak Diode Recovery 

––– 3.2 ––– V/ns

T

J

=150°C,I

S

= 97A,V

DS

= 40V

t

rr

Reverse Recovery Time ––– 26 –––

ns

T

J

= 25° C V

R

= 34V

––– 27 ––– T

J

= 125°C

I

F

= 97A

Q

rr

Reverse Recovery Charge ––– 24 ––– T

J

= 25°C

di/dt = 100A/µs 

––– 23 ––– T

J

= 125°C

I

RRM

Reverse Recovery Current ––– 1.2 ––– A T

J

= 25°C

nC

Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

J

max, starting T

J

= 25°C, L = 0.015mH

R

G

= 50, I

AS

= 97A, V

GS

=10V.

 I

SD

≤ 97A, di/dt ≤ 862A/µs, V

DD

≤ V(

BR)DSS

, T

J

≤ 150°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

C

oss

eff. (TR) is a fixed capacitance that gives the

same charging time as C

oss

while V

DS

is rising from 0

to 80% V

DSS

.

C

oss

eff. (ER) is a fixed capacitance that gives the

same energy as C

oss

while V

DS

is rising from 0 to

80% V

DSS

.

When mounted on 1" square PCB (FR-4 or G-10

Material). For recommended footprint and soldering

techniques refer to application note # AN-994.

http://www.irf.com/technical-info/appnotes/an-994.pdf

 R



is measured at T

J

approximately 90°C.

 This value determined from sample failure population,

starting T

J

= 25°C, L= 0.015mH, R

G

= 50, I

AS

= 97A,

V

GS

=10V.

Limited by T

J

max, starting T

J

= 25°C, L = 1mH

R

G

= 50, I

AS

= 18A, V

GS

=10V.

IRF40DM229

IRF40DM229

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