IRF40DM229
7
2016-3-2
Fig 17. Threshold Voltage vs. Temperature
Fig 21. Typical Stored Charge vs. dif/dt
Fig 18. Typical Recovery Current vs. dif/dt
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 100µA
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
100 200 300 400 500 600 700
di
F
/dt (A/µs)
0
2
4
6
8
10
I
R
R
M
(
A
)
I
F
= 65A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
100 200 300 400 500 600 700
di
F
/dt (A/µs)
0
2
4
6
8
10
I
R
R
M
(
A
)
I
F
= 97A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
100 200 300 400 500 600 700
di
F
/dt (A/µs)
25
50
75
100
125
150
175
200
Q
R
R
(
n
C
)
I
F
= 65A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
100 200 300 400 500 600 700
di
F
/dt (A/µs)
25
50
75
100
125
150
175
200
225
Q
R
R
(
n
C
)
I
F
= 97A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
IRF40DM229
8
2016-3-2
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
Fig 23a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 25a. Gate Charge Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 25b. Gate Charge Waveform
VDD
IRF40DM229
9
2016-3-2
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DirectFET™ Board Footprint, MF Outline
(Medium Size Can, E-Designation)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
D
S
DD
D
S
S

IRF40DM229

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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