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VS-50RIA80

P1-P3P4-P6P7-P8
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
1
Document Number: 93711
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
ELECTRICAL SPECIFICATIONS
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
p
5 ms
PRODUCT SUMMARY
Package TO-208AC (TO-65)
Diode variation Single SCR
I
T(AV)
50 A
V
DRM
/V
RRM
100 V to 1200 V
V
TM
1.60 V
I
GT
100 mA
T
J
-40 °C to 125 °C
TO-208AC (TO-65)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
50 A
T
C
94 °C
I
T(RMS)
80 A
I
TSM
50 Hz 1430
A
60 Hz 1490
I
2
t
50 Hz 10.18
kA
2
s
60 Hz 9.30
V
DRM
/V
RRM
100 to 1200 V
t
q
Typical 110 μs
T
J
-40 to +125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
(1)
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
(2)
V
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
VS-50RIA
10 100 150
15
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
2
Document Number: 93711
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° sinusoidal conduction
50 A
94 °C
Maximum RMS on-state current I
T(RMS)
80 A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1430
A
t = 8.3 ms 1490
t = 10 ms
100 % V
RRM
reapplied
1200
t = 8.3 ms 1255
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
10.18
kA
2
s
t = 8.3 ms 9.30
t = 10 ms
100 % V
RRM
reapplied
7.20
t = 8.3 ms 6.56
Maximum I
2
t for fusing I
2
t
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
101.8 kA
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.94
V
High level value of threshold voltage V
T(TO)2
( x I
T(AV)
< I < 20 x x I
T(AV)
), T
J
= T
J
maximum 1.08
Low level value of on-state
slope resistance
r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 4.08
m
High level value of on-state
slope resistance
r
t2
( x I
T(AV)
< I < 20 x x I
T(AV)
), T
J
= T
J
maximum 3.34
Maximum on-state voltage V
TM
I
pk
= 157 A, T
J
= 25 °C 1.60 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
200
mA
Latching current I
L
Anode supply 6 V, resistive load 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of
rise of turned-on current
V
DRM
600 V
dI/dt
T
C
= 125 °C, V
DM
= Rated V
DRM
,
Gate pulse = 20 V, 15 , t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
200
A/μs
V
DRM
1600 V 100
Typical delay time t
d
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15 source, t
p
= 20 μs
0.9
μs
Typical turn-off time t
q
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = - 10 A/μs, V
R
= 50 V
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 100 % rated V
DRM
200
V/μs
T
J
= T
J
maximum linear to 67 % rated V
DRM
500
(1)
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
3
Document Number: 93711
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
5 ms 10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak positive gate current I
GM
2.5 A
Maximum peak positive gate voltage +V
GM
20
V
Maximum peak negative gate voltage -V
GM
10
DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
250
mAT
J
= 25 °C 100
T
J
= 125 °C 50
DC gate voltage required to trigger V
GT
T
J
= - 40 °C 3.5
V
T
J
= 25 °C 2.5
DC gate current not to trigger I
GD
T
J
= T
J
maximum,
V
DRM
= Rated voltage
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
5.0 mA
DC gate voltage not to trigger V
GD
T
J
= T
J
maximum 0.2 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range
T
J
, T
Stg
-40 to +125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.35
K/W
Maximum thermal resistance,
case to heat sink
R
thCS
Mounting surface, smooth, flat and greased 0.25
Allowable mounting torque
Non-lubricated threads
3.4
+ 0 - 10 %
(30)
N · m
(lbf · in)
Lubricated threads
2.3
+ 0 - 10 %
(20)
Approximate weight
28 g
1.0 oz.
Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.078 0.057
T
J
= T
J
maximum K/W
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
P1-P3P4-P6P7-P8

VS-50RIA80

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Manufacturer:
Vishay Semiconductors
Description:
SCRs 800 Volt 50 Amp
Lifecycle:
New from this manufacturer.
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