VS-50RIA Series
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Vishay Semiconductors
Revision: 19-Nov-15
5
Document Number: 93711
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
50RIA Series
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJ-hs
Steady State Value
R = 0.35 K/W
thJ-hs
Transient Thermal Impedance Z (K/W)
50RIA Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=-40 °C
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
tr<=1 µs
Rectangular gate pulse
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65 ohms
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(3) (4)
Tj=125 °C
50RIA Series Frequency Limited by PG(AV)
